中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Spin accumulation and decay in magnetic Schottky barriers

文献类型:期刊论文

作者Bauer, GEW ; Tserkovnyak, Y ; Brataas, A ; Ren, J ; Xia, K ; Zwierzycki, M ; Kelly, PJ
刊名PHYSICAL REVIEW B
出版日期2005
卷号72期号:15
关键词VALVE TRANSISTOR INJECTION SEMICONDUCTOR METAL TRANSPORT SYSTEMS GAAS
ISSN号1098-0121
通讯作者Bauer, GEW (reprint author), Delft Univ Technol, Kavli Inst Nanosci, Lorentzweg 1, NL-2628 CJ Delft, Netherlands.
中文摘要The theory of charge and spin transport in forward-biased Schottky barriers reveals characteristic and experimentally relevant features. The conductivity mismatch is found to enhance the current-induced spin imbalance in the semiconductor. The GaAs\MnAs interface resistance is obtained from an analysis of the magnetic-field-dependent Kerr rotation experiments by Stephens and compared with first-principles calculations for intrinsic interfaces. With increasing current bias, the interface transparency grows toward the theoretical values, reflecting increasingly efficient Schottky barrier screening.
收录类别SCI
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/52864]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
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GB/T 7714
Bauer, GEW,Tserkovnyak, Y,Brataas, A,et al. Spin accumulation and decay in magnetic Schottky barriers[J]. PHYSICAL REVIEW B,2005,72(15).
APA Bauer, GEW.,Tserkovnyak, Y.,Brataas, A.,Ren, J.,Xia, K.,...&Kelly, PJ.(2005).Spin accumulation and decay in magnetic Schottky barriers.PHYSICAL REVIEW B,72(15).
MLA Bauer, GEW,et al."Spin accumulation and decay in magnetic Schottky barriers".PHYSICAL REVIEW B 72.15(2005).

入库方式: OAI收割

来源:物理研究所

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