Spontaneous formation of ordered indium nanowire array on Si(001)
文献类型：期刊论文
| 作者 | Li, JL ; Liang, XJ ; Jia, JF ; Liu, X ; Wang, JZ ; Wang, EG ; Xue, QK |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2001 |
| 卷号 | 79期号:17页码:2826 |
| 关键词 | SELF-ORGANIZED GROWTH INDUCED RECONSTRUCTIONS VACANCY INTERACTION SI(100) SURFACE NANOSTRUCTURES STEPS AL |
| ISSN号 | 0003-6951 |
| 通讯作者 | Li, JL (reprint author), Chinese Acad Sci, State Key Lab Surface Phys, Beijing 100080, Peoples R China. |
| 中文摘要 | Growth of In on the Si(001)-2xn nanostructured surface is investigated by an in situ scanning tunneling microscope (STM). The deposited In atoms predominantly occupy the normal 2x1 dimer-row structure, and develop into a uniform array of In nanowires at a coverage of similar to0.2 ML. High-resolution STM images show that the In atoms form a stable local 2x2 reconstruction that removes surface Si dangling bonds states and saturates all In valency. Since the dimensions of the Si(001)-2xn vacancy line structure depend on impurity concentrations, this study demonstrates that the 2xn surface can be used for spontaneous fabrication of various metal nanowire arrays. (C) 2001 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/52968]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, JL,Liang, XJ,Jia, JF,et al. Spontaneous formation of ordered indium nanowire array on Si(001)[J]. APPLIED PHYSICS LETTERS,2001,79(17):2826. |
| APA | Li, JL.,Liang, XJ.,Jia, JF.,Liu, X.,Wang, JZ.,...&Xue, QK.(2001).Spontaneous formation of ordered indium nanowire array on Si(001).APPLIED PHYSICS LETTERS,79(17),2826. |
| MLA | Li, JL,et al."Spontaneous formation of ordered indium nanowire array on Si(001)".APPLIED PHYSICS LETTERS 79.17(2001):2826. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。