Spontaneous vacancy array formation on FeSi2 and CoSi2 formed on Si(100) 2 x n surface
文献类型：期刊论文
| 作者 | Wang, JZ ; Jia, JF ; Liu, H ; Li, JL ; Liu, X ; Xue, QK |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2002 |
| 卷号 | 80期号:11页码:1990 |
| 关键词 | SCANNING-TUNNELING-MICROSCOPY ENERGY-ELECTRON-DIFFRACTION ATOMIC-STRUCTURE SI(001) NUCLEATION EPITAXY NISI2 SCALE |
| ISSN号 | 0003-6951 |
| 通讯作者 | Xue, QK (reprint author), Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Atomic structure of FeSi2 or CoSi2 grown on the Si(100) 2xn surface has been investigated by scanning tunneling microscopy. After annealing the Fe or Co covered Si(100) 2xn substrate at similar to800 degreesC, an ordered adatom vacancy array appears on the nominal 1x1 surface of the formed FeSi2 or CoSi2 islands, which has not been observed for silicide on the Si(100)-2x1. Upon further annealing to similar to1100 degreesC, the vacancies coalesce into striped domains along one of the <011> directions. These nanostructured features are a result of the Ni impurities, and can be a promising template for fabricating nanodot arrays. (C) 2002 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/52980]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, JZ,Jia, JF,Liu, H,et al. Spontaneous vacancy array formation on FeSi2 and CoSi2 formed on Si(100) 2 x n surface[J]. APPLIED PHYSICS LETTERS,2002,80(11):1990. |
| APA | Wang, JZ,Jia, JF,Liu, H,Li, JL,Liu, X,&Xue, QK.(2002).Spontaneous vacancy array formation on FeSi2 and CoSi2 formed on Si(100) 2 x n surface.APPLIED PHYSICS LETTERS,80(11),1990. |
| MLA | Wang, JZ,et al."Spontaneous vacancy array formation on FeSi2 and CoSi2 formed on Si(100) 2 x n surface".APPLIED PHYSICS LETTERS 80.11(2002):1990. |
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来源：物理研究所
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