Stacking faults and their effects on ferroelectric properties in strontium bismuth tantalate
文献类型：期刊论文
| 作者 | Ding, Y ; Liu, JS ; Zhu, JS ; Wang, YN |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2002 |
| 卷号 | 91期号:4页码:2255 |
| 关键词 | SRBI2TA2O9 THIN-FILMS ELECTRON-MICROSCOPY SR SITE BI DEPOSITION CERAMICS DEFECTS |
| ISSN号 | 0021-8979 |
| 通讯作者 | Ding, Y (reprint author), Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China. |
| 中文摘要 | The surface enhanced Raman scattering (SERS) spectrum of the solid electrolyte interphase (SEI) film on the Ag electrode discharged to 0.0 V in lithium battery was measured by normal Raman spectrometer at different excited wavelength. Compared with the Raman spectra of pure LiOH.H2O and Li2CO3 reagents, all the SERS bands of the SEI film formed on the surface of the Ag electrode can be assigned to Li2CO3 and LiOH.H2O. which are the main stable components of the SEI film in the presence of trace water. LiF may be another possible stable component, however, it cannot be detected due to its inactivity in Raman spectrum. (C) 2002 Elsevier Science B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/53050]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Ding, Y,Liu, JS,Zhu, JS,et al. Stacking faults and their effects on ferroelectric properties in strontium bismuth tantalate[J]. JOURNAL OF APPLIED PHYSICS,2002,91(4):2255. |
| APA | Ding, Y,Liu, JS,Zhu, JS,&Wang, YN.(2002).Stacking faults and their effects on ferroelectric properties in strontium bismuth tantalate.JOURNAL OF APPLIED PHYSICS,91(4),2255. |
| MLA | Ding, Y,et al."Stacking faults and their effects on ferroelectric properties in strontium bismuth tantalate".JOURNAL OF APPLIED PHYSICS 91.4(2002):2255. |
入库方式： OAI收割
来源：物理研究所
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