中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Steps of Al/Si nanocluster studied by scanning tunneling microscope Moire method

文献类型:期刊论文

作者Shang, HX ; Xie, HM ; Xue, QK ; Jia, JF ; Dai, FL
刊名SCANNING
出版日期2004
卷号26期号:6页码:282
关键词DIFFUSION SURFACES FIELD
ISSN号0161-0457
通讯作者Xie, HM (reprint author), Tsing Hua Univ, Dept Engn Mech, FML, Beijing 100084, Peoples R China.
中文摘要The surface stress around the steps of Al/Si (111)-7x7 artificial nanocluster array has been studied by the scanning tunneling microscope (STM) Moire method. The distributions of sigma(ij)(epsilon(ij)) near the selected step edge are precisely quantified by Moire pattern. Observation by STM reveals the details of stress distribution that varies around steps and other defects of the surface. The experimental results show that the intrinsic surface stress tensors are quite different in the upper and lower terraces near a step, which provides indirect evidence that the exchange incorporation occurs for Al atoms on the Si (111) surface. The study also provides valuable data regarding control of the growth mode of artificial nanostructures by manipulating the growth conditions and kinetics.
收录类别SCI
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/53070]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Shang, HX,Xie, HM,Xue, QK,et al. Steps of Al/Si nanocluster studied by scanning tunneling microscope Moire method[J]. SCANNING,2004,26(6):282.
APA Shang, HX,Xie, HM,Xue, QK,Jia, JF,&Dai, FL.(2004).Steps of Al/Si nanocluster studied by scanning tunneling microscope Moire method.SCANNING,26(6),282.
MLA Shang, HX,et al."Steps of Al/Si nanocluster studied by scanning tunneling microscope Moire method".SCANNING 26.6(2004):282.

入库方式: OAI收割

来源:物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。