Steps of Al/Si nanocluster studied by scanning tunneling microscope Moire method
文献类型：期刊论文
| 作者 | Shang, HX ; Xie, HM ; Xue, QK ; Jia, JF ; Dai, FL |
| 刊名 | SCANNING
 |
| 出版日期 | 2004 |
| 卷号 | 26期号:6页码:282 |
| 关键词 | DIFFUSION SURFACES FIELD |
| ISSN号 | 0161-0457 |
| 通讯作者 | Xie, HM (reprint author), Tsing Hua Univ, Dept Engn Mech, FML, Beijing 100084, Peoples R China. |
| 中文摘要 | The surface stress around the steps of Al/Si (111)-7x7 artificial nanocluster array has been studied by the scanning tunneling microscope (STM) Moire method. The distributions of sigma(ij)(epsilon(ij)) near the selected step edge are precisely quantified by Moire pattern. Observation by STM reveals the details of stress distribution that varies around steps and other defects of the surface. The experimental results show that the intrinsic surface stress tensors are quite different in the upper and lower terraces near a step, which provides indirect evidence that the exchange incorporation occurs for Al atoms on the Si (111) surface. The study also provides valuable data regarding control of the growth mode of artificial nanostructures by manipulating the growth conditions and kinetics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/53070]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Shang, HX,Xie, HM,Xue, QK,et al. Steps of Al/Si nanocluster studied by scanning tunneling microscope Moire method[J]. SCANNING,2004,26(6):282. |
| APA | Shang, HX,Xie, HM,Xue, QK,Jia, JF,&Dai, FL.(2004).Steps of Al/Si nanocluster studied by scanning tunneling microscope Moire method.SCANNING,26(6),282. |
| MLA | Shang, HX,et al."Steps of Al/Si nanocluster studied by scanning tunneling microscope Moire method".SCANNING 26.6(2004):282. |
入库方式： OAI收割
来源：物理研究所
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