STM observation and first-principles determination of Ge nanoscale structures on Si(111)
文献类型：期刊论文
| 作者 | Qin, ZH ; Shi, DX ; Ma, HF ; Gao, HJ ; Rao, AS ; Wang, SW ; Pantelides, ST |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2007 |
| 卷号 | 75期号:8 |
| 关键词 | QUANTUM DOTS ELECTRONIC-STRUCTURE SURFACE CLUSTER RECONSTRUCTION CHEMISORPTION BORON ADSORPTION HYDROGEN NANOSTRUCTURES |
| ISSN号 | 1098-0121 |
| 通讯作者 | Gao, HJ (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Scanning tunneling microscopy observations and first-principles quantum mechanical calculations were employed to investigate the nanoscale structures formed on Si(111) surfaces upon germanium deposition at a coverage of similar to 0.3 monolayer. At room temperature, Ge atoms form nanoclusters with sizes of 1.5-6 nanometers in width. After annealing, the nanoclusters become two-dimensional islands with typical size of similar to 10 nanometers in width. We propose that the annealing or high-T deposition results in a partial transformation of (7x7) reconstructed unit cells to unreconstructed Si(111) configurations on which the Ge adatoms reside at the T-4 sites and form a (root 3x root 3)R30 degrees reconstruction. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/53082]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Qin, ZH,Shi, DX,Ma, HF,et al. STM observation and first-principles determination of Ge nanoscale structures on Si(111)[J]. PHYSICAL REVIEW B,2007,75(8). |
| APA | Qin, ZH.,Shi, DX.,Ma, HF.,Gao, HJ.,Rao, AS.,...&Pantelides, ST.(2007).STM observation and first-principles determination of Ge nanoscale structures on Si(111).PHYSICAL REVIEW B,75(8). |
| MLA | Qin, ZH,et al."STM observation and first-principles determination of Ge nanoscale structures on Si(111)".PHYSICAL REVIEW B 75.8(2007). |
入库方式： OAI收割
来源：物理研究所
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