STM study of Ag film initial stages growth on a GaN(0001) surface grown by MBE
文献类型：期刊论文
| 作者 | Bakhtizin, RZ ; Wu, KH ; Xue, AZ ; Xue, QK ; Nagao, T ; Sakurai, T |
| 刊名 | PHYSICS OF LOW-DIMENSIONAL STRUCTURES
 |
| 出版日期 | 2003 |
| 卷号 | 3-4页码:21 |
| 关键词 | SCANNING-TUNNELING-MICROSCOPY GAN RECONSTRUCTIONS ISLANDS |
| ISSN号 | 0204-3467 |
| 通讯作者 | Bakhtizin, RZ (reprint author), Bashkir State Univ, Dept Phys, Ufa 450074, Russia. |
| 中文摘要 | The adsorption and growth of Ag on the GaN(0001) pseudo 1x1-Ga surface was studied by using a combined scanning tunneling microscopy (STM)-molecular beam epitaxy (MBE) system. Ag shows high mobility and huge diffusion length on the surface, which results in the formation of large monolayer Ag islands at submonolayer coverage. We report the observation of a drastic change of the Ag growth mode on the GaN(0001) surface, from Stranski-Krastanov growth at low Ag flux (similar to0.8 ML/min) to layer-by-layer growth at a high flux (1 ML/sec). Based on this finding a new approach to obtain flat epitaxial Ag film on the GaN(0001) surface, by using high Ag flux, is demonstrated. In addition, by annealing the Ag film-covered GaN(0001) surface we found a novel unreconstructed Ag-terminated GaN(0001)-1 x 1 and explain its structure by a T-1-site adatom model. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/53085]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Bakhtizin, RZ,Wu, KH,Xue, AZ,et al. STM study of Ag film initial stages growth on a GaN(0001) surface grown by MBE[J]. PHYSICS OF LOW-DIMENSIONAL STRUCTURES,2003,3-4:21. |
| APA | Bakhtizin, RZ,Wu, KH,Xue, AZ,Xue, QK,Nagao, T,&Sakurai, T.(2003).STM study of Ag film initial stages growth on a GaN(0001) surface grown by MBE.PHYSICS OF LOW-DIMENSIONAL STRUCTURES,3-4,21. |
| MLA | Bakhtizin, RZ,et al."STM study of Ag film initial stages growth on a GaN(0001) surface grown by MBE".PHYSICS OF LOW-DIMENSIONAL STRUCTURES 3-4(2003):21. |
入库方式： OAI收割
来源：物理研究所
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