Straight beta-SiC nanorods synthesized by using C-Si-SiO2
文献类型：期刊论文
| 作者 | Lai, HL ; Wong, NB ; Zhou, XT ; Peng, HY ; Au, FCK ; Wang, N ; Bello, I ; Lee, CS ; Lee, ST ; Duan, XF |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2000 |
| 卷号 | 76期号:3页码:294 |
| 关键词 | CARBON-NANOTUBE FIELD-EMISSION SILICON NANOWIRES CARBIDE NANORODS LASER-ABLATION GROWTH FILMS DIAMOND OXYGEN |
| ISSN号 | 0003-6951 |
| 通讯作者 | Lai, HL (reprint author), City Univ Hong Kong, Ctr Super Diamond & Adv Films, Hong Kong, Hong Kong. |
| 中文摘要 | Straight beta-silicon carbide nanorods have been grown on silicon wafers using hot filament chemical vapor deposition with iron particles as catalyst. A plate made of a C-Si-SiO2 powder mixture was used as carbon and silicon sources. Hydrogen, which was the only gas fed into the deposition system, acts both as a reactant and as a mass transporting medium. The diameter of the beta-SiC nanorod ranged from 20 to 70 nm, while its length was approximately 1 mu m. A growth mechanism of beta-silicon carbide nanorods was proposed. The field emission properties of the beta-silicon carbide nanorods grown on the silicon substrate are also reported. (C) 2000 American Institute of Physics. [S0003-6951(00)03203-4]. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/53101]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Lai, HL,Wong, NB,Zhou, XT,et al. Straight beta-SiC nanorods synthesized by using C-Si-SiO2[J]. APPLIED PHYSICS LETTERS,2000,76(3):294. |
| APA | Lai, HL.,Wong, NB.,Zhou, XT.,Peng, HY.,Au, FCK.,...&Duan, XF.(2000).Straight beta-SiC nanorods synthesized by using C-Si-SiO2.APPLIED PHYSICS LETTERS,76(3),294. |
| MLA | Lai, HL,et al."Straight beta-SiC nanorods synthesized by using C-Si-SiO2".APPLIED PHYSICS LETTERS 76.3(2000):294. |
入库方式： OAI收割
来源：物理研究所
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