Strain relaxation in high electron mobility Si1-xGex/Si structures
文献类型：期刊论文
| 作者 | Li, JH ; Holy, V ; Bauer, F ; Schaffler, F |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 1997 |
| 卷号 | 82期号:6页码:2881 |
| 关键词 | SIGE THIN-FILMS MISFIT DISLOCATIONS SI/SIGE HETEROSTRUCTURES EPITAXIAL LAYERS NUCLEATION SCATTERING EVOLUTION PATTERN |
| ISSN号 | 0021-8979 |
| 中文摘要 | We have studied the strain relaxation in Si1-xGex/Si (001) structures with high electron mobility grown by molecular beam epitaxy. The structures contain a Si1-xGex layer with linearly graded composition, followed subsequently by a uniform composition buffer Si1-yGey, a thin Si layer serving as two-dimensional electron gas channel, and a modulation n-doped Si1-xGex layer. We found that a major part of the graded layer is basically completely strain relaxed, whereas a very thin layer close to the graded-uniform layer interface, as well as the uniform alloy buffer, are just partly relaxed. We performed also model calculations of the strain status of a graded-uniform two-layer system using an equilibrium approach. It is found that for our Si0.7Ge0.3 systems, the residual strains of the samples with different composition, grading rate, and a uniform buffer thickness of 0.6 mu m is almost the same at equilibrium. However, experiments show a clear dependence of the residual strain on the grading rate of the graded buffer. The higher the grading rate, the higher is the residual strain in the constant composition alloy buffer. This indicates that with a lower grading rate, the structure is closer to equilibrium, and is thus, thermally more stable. Furthermore, lower grading rates produce also smoother surfaces. (C) 1997 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/53112]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, JH,Holy, V,Bauer, F,et al. Strain relaxation in high electron mobility Si1-xGex/Si structures[J]. JOURNAL OF APPLIED PHYSICS,1997,82(6):2881. |
| APA | Li, JH,Holy, V,Bauer, F,&Schaffler, F.(1997).Strain relaxation in high electron mobility Si1-xGex/Si structures.JOURNAL OF APPLIED PHYSICS,82(6),2881. |
| MLA | Li, JH,et al."Strain relaxation in high electron mobility Si1-xGex/Si structures".JOURNAL OF APPLIED PHYSICS 82.6(1997):2881. |
入库方式： OAI收割
来源：物理研究所
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