Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers
文献类型：期刊论文
| 作者 | Peng, CS ; Chen, H ; Zhao, ZY ; Li, JH ; Dai, DY ; Huang, Q ; Zhou, JM ; Zhang, YH ; Tung, CH ; Sheng, TT ; Wang, J |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 1999 |
| 卷号 | 201页码:530 |
| 关键词 | THREADING DISLOCATION SI(100) LAYERS FILMS |
| ISSN号 | 0022-0248 |
| 通讯作者 | Peng, CS (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Time-resolved thermoelectric power measurements on Nd2/3Sr1/3MnO3-delta epitaxial layers show a voltage transient which is superimposed to the usual quasistatic thermovoltage decay which is due to heat diffusion, but only in the activated regime. The characteristic temperature of the separation is 140 K. The extra transients are ascribed to the decay of an ambipolar charge distribution in trap states. (C) 1999 Elsevier Science B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/53114]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Peng, CS,Chen, H,Zhao, ZY,et al. Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers[J]. JOURNAL OF CRYSTAL GROWTH,1999,201:530. |
| APA | Peng, CS.,Chen, H.,Zhao, ZY.,Li, JH.,Dai, DY.,...&Wang, J.(1999).Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers.JOURNAL OF CRYSTAL GROWTH,201,530. |
| MLA | Peng, CS,et al."Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers".JOURNAL OF CRYSTAL GROWTH 201(1999):530. |
入库方式： OAI收割
来源：物理研究所
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