Strain tuning of topological band order in cubic semiconductors
文献类型：期刊论文
| 作者 | Feng, WX ; Zhu, WG ; Weitering, HH ; Stocks, GM ; Yao, YG ; Xiao, D |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2012 |
| 卷号 | 85期号:19 |
| 关键词 | HGTE QUANTUM-WELLS SINGLE DIRAC CONE INSULATORS SURFACE BI2TE3 PHASE |
| ISSN号 | 1098-0121 |
| 通讯作者 | Feng, WX (reprint author), Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA. |
| 中文摘要 | We theoretically explore the possibility of tuning the topological order of cubic diamond/zinc-blende semiconductors with external strain. Based on the tight-binding model, we analyze the evolution of the cubic semiconductor band structure under hydrostatic or biaxial lattice expansion, by which a generic guiding principle is established that lattice expansion can induce a topological phase transition of small band-gap cubic semiconductors via a band inversion, and further breaking of the cubic symmetry leads to a topological insulating phase. Using density functional theory calculations, we demonstrate that a prototype topological trivial semiconductor, InSb, is converted to a nontrivial topological semiconductor with a 2%-3% biaxial lattice expansion. |
| 收录类别 | SCI |
| 资助信息 | Laboratory Directed Research and Development of Oak Ridge National Laboratory |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/53116]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Feng, WX,Zhu, WG,Weitering, HH,et al. Strain tuning of topological band order in cubic semiconductors[J]. PHYSICAL REVIEW B,2012,85(19). |
| APA | Feng, WX,Zhu, WG,Weitering, HH,Stocks, GM,Yao, YG,&Xiao, D.(2012).Strain tuning of topological band order in cubic semiconductors.PHYSICAL REVIEW B,85(19). |
| MLA | Feng, WX,et al."Strain tuning of topological band order in cubic semiconductors".PHYSICAL REVIEW B 85.19(2012). |
入库方式： OAI收割
来源：物理研究所
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