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Chinese Academy of Sciences Institutional Repositories Grid
Strain-dependent vacuum annealing effects in La0.67Ca0.33MnO3-delta films

文献类型:期刊论文

作者Sun, JR ; Yeung, CF ; Zhao, K ; Zhou, LZ ; Leung, CH ; Wong, HK ; Shen, BG
刊名APPLIED PHYSICS LETTERS
出版日期2000
卷号76期号:9页码:1164
关键词THIN-FILMS OXYGEN STOICHIOMETRY MAGNETORESISTANCE LA0.7CA0.3MNO3 RESISTIVITY
ISSN号0003-6951
通讯作者Sun, JR (reprint author), Chinese Acad Sci, Inst Phys, State Key Lab Magnetism, POB 603, Beijing 100080, Peoples R China.
中文摘要The effects of vacuum annealing on the structural and transport properties of the La0.67Ca0.33MnO3-delta films grown on SrTiO3 (LCMO/STO) and NdGaO3 (LCMO/NGO) substrates have been studied. A lattice expansion due to oxygen release during the annealing is observed. Under the same condition, the change of the out-of-plane lattice parameter in LCMO/STO is two to three times larger than that in LCMO/NGO, indicating a strong tendency for the oxygen in the former to escape. Correspondingly, the metal-to-semiconductor transition shifts to lower temperatures, linearly with lattice constant until a critical value, Delta d = 0.03 Angstrom for LCMO/STO and Delta d = 0.05 Angstrom for LCMO/NGO, after which a sudden drop of the transition temperature to zero occurs. The different lattice strains in both films are presumably responsible for the different critical oxygen contents for the occurrence of the resistive transition. (C) 2000 American Institute of Physics. [S0003-6951(00)03209-5].
收录类别SCI
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/53118]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Sun, JR,Yeung, CF,Zhao, K,et al. Strain-dependent vacuum annealing effects in La0.67Ca0.33MnO3-delta films[J]. APPLIED PHYSICS LETTERS,2000,76(9):1164.
APA Sun, JR.,Yeung, CF.,Zhao, K.,Zhou, LZ.,Leung, CH.,...&Shen, BG.(2000).Strain-dependent vacuum annealing effects in La0.67Ca0.33MnO3-delta films.APPLIED PHYSICS LETTERS,76(9),1164.
MLA Sun, JR,et al."Strain-dependent vacuum annealing effects in La0.67Ca0.33MnO3-delta films".APPLIED PHYSICS LETTERS 76.9(2000):1164.

入库方式: OAI收割

来源:物理研究所

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