Strain-driven onset of nontrivial topological insulating states in Zintl Sr2X compounds (X = Pb, Sn)
文献类型:期刊论文
| 作者 | Sun, Y ; Chen, XQ ; Franchini, C ; Li, DZ ; Yunoki, S ; Li, YY ; Fang, Z |
| 刊名 | PHYSICAL REVIEW B
![]() |
| 出版日期 | 2011 |
| 卷号 | 84期号:16 |
| 关键词 | HGTE QUANTUM-WELLS SINGLE DIRAC CONE TRANSITION SURFACE METALS BI2TE3 PHASE |
| ISSN号 | 1098-0121 |
| 通讯作者 | Chen, XQ (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China. |
| 中文摘要 | We explore the topological behavior of the binary Zintl phase of the alkaline-earth-metal-based compounds Sr2Pb and Sr2Sn using both standard and hybrid density functional theory. It is found that Sr2Pb lies on the verge of a topological instability which can be suitably tuned through the application of a small uniaxial expansion strain (>3%). The resulting nontrivial topologically insulating state displays well-defined metallic states in the Sr2Pb(010) surface, whose evolution is studied as a function of the film thickness. |
| 收录类别 | SCI |
| 资助信息 | Chinese Academy of Sciences; NSFC of China [51074151, 51174188, 51050110444]; Supercomputing Center of the Chinese Academy of Sciences; 973 program of China [2007CB925000]; HPC cluster in the Materials Process Simulation Division, IMR |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/53119] ![]() |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Sun, Y,Chen, XQ,Franchini, C,et al. Strain-driven onset of nontrivial topological insulating states in Zintl Sr2X compounds (X = Pb, Sn)[J]. PHYSICAL REVIEW B,2011,84(16). |
| APA | Sun, Y.,Chen, XQ.,Franchini, C.,Li, DZ.,Yunoki, S.,...&Fang, Z.(2011).Strain-driven onset of nontrivial topological insulating states in Zintl Sr2X compounds (X = Pb, Sn).PHYSICAL REVIEW B,84(16). |
| MLA | Sun, Y,et al."Strain-driven onset of nontrivial topological insulating states in Zintl Sr2X compounds (X = Pb, Sn)".PHYSICAL REVIEW B 84.16(2011). |
入库方式: OAI收割
来源:物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。

