中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Strained state of the layer system depending on the SiGe layer thickness by micro-Raman mapping

文献类型:期刊论文

作者Zheng, XH ; Chen, H ; Li, YK ; Huang, Q ; Zhou, JM
刊名JOURNAL OF CRYSTAL GROWTH
出版日期2004
卷号264期号:1-3页码:104
关键词MOLECULAR-BEAM EPITAXY THREADING DISLOCATION DENSITY BUFFER LAYER GROWTH FILMS
ISSN号0022-0248
通讯作者Chen, H (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要Micro-Raman scattering experiments, including Raman spectroscopy and microscopy, have been carried out to study the strain state of the Si0.75Ge0.25 films using the low-temperature Si (LT-Si) buffer layers. SiGe layers with different thickness of 1000, 3000 and 5000 Angstrom on LT-Si were grown on Si (0 0 1) substrates by gas-source molecular beam epitaxy (MBE). The Raman-generated images have provided a direct picture of the strain state of the SiGe layer and Si substrate with SiGe thickness. The experimental results give us evidence that the change of strain state in the SiGe film and the Si substrate with the SiGe thickness is ascribed to the LT-Si buffer layer, which can effectively adjust the strain mismatch. This function is similar to compliant effect as a thin freestanding substrate. (C) 2004 Elsevier B.V. All rights reserved.
收录类别SCI
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/53121]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Zheng, XH,Chen, H,Li, YK,et al. Strained state of the layer system depending on the SiGe layer thickness by micro-Raman mapping[J]. JOURNAL OF CRYSTAL GROWTH,2004,264(1-3):104.
APA Zheng, XH,Chen, H,Li, YK,Huang, Q,&Zhou, JM.(2004).Strained state of the layer system depending on the SiGe layer thickness by micro-Raman mapping.JOURNAL OF CRYSTAL GROWTH,264(1-3),104.
MLA Zheng, XH,et al."Strained state of the layer system depending on the SiGe layer thickness by micro-Raman mapping".JOURNAL OF CRYSTAL GROWTH 264.1-3(2004):104.

入库方式: OAI收割

来源:物理研究所

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