Strained state of the layer system depending on the SiGe layer thickness by micro-Raman mapping
文献类型:期刊论文
作者 | Zheng, XH ; Chen, H ; Li, YK ; Huang, Q ; Zhou, JM |
刊名 | JOURNAL OF CRYSTAL GROWTH
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出版日期 | 2004 |
卷号 | 264期号:1-3页码:104 |
关键词 | MOLECULAR-BEAM EPITAXY THREADING DISLOCATION DENSITY BUFFER LAYER GROWTH FILMS |
ISSN号 | 0022-0248 |
通讯作者 | Chen, H (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
中文摘要 | Micro-Raman scattering experiments, including Raman spectroscopy and microscopy, have been carried out to study the strain state of the Si0.75Ge0.25 films using the low-temperature Si (LT-Si) buffer layers. SiGe layers with different thickness of 1000, 3000 and 5000 Angstrom on LT-Si were grown on Si (0 0 1) substrates by gas-source molecular beam epitaxy (MBE). The Raman-generated images have provided a direct picture of the strain state of the SiGe layer and Si substrate with SiGe thickness. The experimental results give us evidence that the change of strain state in the SiGe film and the Si substrate with the SiGe thickness is ascribed to the LT-Si buffer layer, which can effectively adjust the strain mismatch. This function is similar to compliant effect as a thin freestanding substrate. (C) 2004 Elsevier B.V. All rights reserved. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-24 |
源URL | [http://ir.iphy.ac.cn/handle/311004/53121] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Zheng, XH,Chen, H,Li, YK,et al. Strained state of the layer system depending on the SiGe layer thickness by micro-Raman mapping[J]. JOURNAL OF CRYSTAL GROWTH,2004,264(1-3):104. |
APA | Zheng, XH,Chen, H,Li, YK,Huang, Q,&Zhou, JM.(2004).Strained state of the layer system depending on the SiGe layer thickness by micro-Raman mapping.JOURNAL OF CRYSTAL GROWTH,264(1-3),104. |
MLA | Zheng, XH,et al."Strained state of the layer system depending on the SiGe layer thickness by micro-Raman mapping".JOURNAL OF CRYSTAL GROWTH 264.1-3(2004):104. |
入库方式: OAI收割
来源:物理研究所
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