Strain-mediated uniform islands in stacked Ge/Si(001) layers
文献类型：期刊论文
| 作者 | Xu, MJ ; Jeyanthinath, M ; Wang, XS ; Jia, JF ; Xue, QK |
| 刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
 |
| 出版日期 | 2004 |
| 卷号 | 43期号:11A页码:7411 |
| 关键词 | STRANSKI-KRASTANOV GROWTH SELF-LIMITING GROWTH GE ISLANDS SI(001) SHAPE NANOSTRUCTURES NANOCRYSTALS ORGANIZATION |
| ISSN号 | 0021-4922 |
| 通讯作者 | Xue, QK (reprint author), Natl Univ Singapore, Dept Phys, Lower Kent Ridge Rd, Singapore 119260, Singapore. |
| 中文摘要 | The role of a Si spacer layer in improving the uniformity of multilayer coherent Ge quantum dots on Si(001) is investigated using scanning tunneling microscopy. Deposition of the Si spacer layer at room temperature and subsequent annealing lead to the formation of (001)-oriented Si mesas on top of Ge islands (pyramids and huts). One mesa forms when the island beneath is pyramid-like, whereas a few mesas. form when the island beneath is an elongated hut. The mesas are found to be preferential nucleation sites for the Ge islands in consecutive stacked layers. The vertical-pyramid-replicating and hut-breaking processes play key roles in the improvement of island size, shape and spacing uniformity. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/53125]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xu, MJ,Jeyanthinath, M,Wang, XS,et al. Strain-mediated uniform islands in stacked Ge/Si(001) layers[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,2004,43(11A):7411. |
| APA | Xu, MJ,Jeyanthinath, M,Wang, XS,Jia, JF,&Xue, QK.(2004).Strain-mediated uniform islands in stacked Ge/Si(001) layers.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,43(11A),7411. |
| MLA | Xu, MJ,et al."Strain-mediated uniform islands in stacked Ge/Si(001) layers".JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 43.11A(2004):7411. |
入库方式： OAI收割
来源：物理研究所
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