Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition
文献类型：期刊论文
| 作者 | Chen, Y ; Jiang, Y ; Xu, PQ ; Ma, ZG ; Wang, XL ; Wang, L ; Jia, HQ ; Chen, H |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2011 |
| 卷号 | 28期号:4 |
| 关键词 | PHONON DEFORMATION POTENTIALS OPTICAL-PROPERTIES RAMAN-SCATTERING GALLIUM NITRIDE BUFFER LAYERS STRAIN ALN FILMS HETEROSTRUCTURES PHOTOLUMINESCENCE |
| ISSN号 | 0256-307X |
| 通讯作者 | Chen, Y (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | The strain in GaN epitaxial layers grown on 6H-SiC substrates with an AlN buffer by metalorganic chemical vapor deposition is investigated. It is found that the insertion of a graded AlGaN layer between the GaN layer and the AlN buffer can change the signs of strain. A compressive strain in an overgrown thick (2 mu m) GaN layer is obtained. High-resolution x-ray diffraction, Raman spectroscopy and photoluminescence measurements are used to determine the strain state in the GaN layers. The mechanism of stress control by inserting graded AlGaN in subsequent GaN layers is discussed briefly. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [50872146, 60890192/F0404] |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/53129]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, Y,Jiang, Y,Xu, PQ,et al. Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition[J]. CHINESE PHYSICS LETTERS,2011,28(4). |
| APA | Chen, Y.,Jiang, Y.,Xu, PQ.,Ma, ZG.,Wang, XL.,...&Chen, H.(2011).Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition.CHINESE PHYSICS LETTERS,28(4). |
| MLA | Chen, Y,et al."Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition".CHINESE PHYSICS LETTERS 28.4(2011). |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。