Stress effect on Raman spectra of Ce-doped BaTiO3 films
文献类型:期刊论文
作者 | Chen, MS ; Shen, ZX ; Tang, SH ; Shi, WS ; Cui, DF ; Chen, ZH |
刊名 | JOURNAL OF PHYSICS-CONDENSED MATTER
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出版日期 | 2000 |
卷号 | 12期号:31页码:7013 |
关键词 | HIGH-PRESSURE RAMAN FERROELECTRIC THIN-FILMS PULSED-LASER DEPOSITION ZONE-CENTER PHONONS X-RAY-DIFFRACTION BARIUM-TITANATE PHASE-TRANSITION POLYCRYSTALLINE BATIO3 DIELECTRIC-PROPERTIES LATTICE-PARAMETERS |
ISSN号 | 0953-8984 |
通讯作者 | Shen, ZX (reprint author), Natl Univ Singapore, Dept Phys, Lower Kent Ridge Rd, Singapore 119260, Singapore. |
中文摘要 | Ce-doped BaTiO3 (BTO:Ce) thin films prepared on MgO (100) substrates by pulsed laser deposition (PLD) at oxygen pressure of 1.2 x 10(-3) and 17 Pa have been studied by microRaman spectroscopy, x-ray diffraction (XRD) and atomic force microscopy (AFM). The film deposited at lower oxygen pressure has a larger lattice parameter in the direction normal to the substrate surface, and the film has smaller grains and a smoother surface. The polarized Raman peaks of both as-deposited films show blue shifts and linewidth broadening in comparison to those of the BaTiO3 single crystal. The blue shifts are attributed to tensile stresses in the films. Our results indicate that the grain size increases and the tensile stress relaxes with annealing. We have shown that quantum confinement and oxygen vacancies are not the dominant factors for the observed Raman spectral changes. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-24 |
源URL | [http://ir.iphy.ac.cn/handle/311004/53131] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Chen, MS,Shen, ZX,Tang, SH,et al. Stress effect on Raman spectra of Ce-doped BaTiO3 films[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,2000,12(31):7013. |
APA | Chen, MS,Shen, ZX,Tang, SH,Shi, WS,Cui, DF,&Chen, ZH.(2000).Stress effect on Raman spectra of Ce-doped BaTiO3 films.JOURNAL OF PHYSICS-CONDENSED MATTER,12(31),7013. |
MLA | Chen, MS,et al."Stress effect on Raman spectra of Ce-doped BaTiO3 films".JOURNAL OF PHYSICS-CONDENSED MATTER 12.31(2000):7013. |
入库方式: OAI收割
来源:物理研究所
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