中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Stress effect on Raman spectra of Ce-doped BaTiO3 films

文献类型:期刊论文

作者Chen, MS ; Shen, ZX ; Tang, SH ; Shi, WS ; Cui, DF ; Chen, ZH
刊名JOURNAL OF PHYSICS-CONDENSED MATTER
出版日期2000
卷号12期号:31页码:7013
关键词HIGH-PRESSURE RAMAN FERROELECTRIC THIN-FILMS PULSED-LASER DEPOSITION ZONE-CENTER PHONONS X-RAY-DIFFRACTION BARIUM-TITANATE PHASE-TRANSITION POLYCRYSTALLINE BATIO3 DIELECTRIC-PROPERTIES LATTICE-PARAMETERS
ISSN号0953-8984
通讯作者Shen, ZX (reprint author), Natl Univ Singapore, Dept Phys, Lower Kent Ridge Rd, Singapore 119260, Singapore.
中文摘要Ce-doped BaTiO3 (BTO:Ce) thin films prepared on MgO (100) substrates by pulsed laser deposition (PLD) at oxygen pressure of 1.2 x 10(-3) and 17 Pa have been studied by microRaman spectroscopy, x-ray diffraction (XRD) and atomic force microscopy (AFM). The film deposited at lower oxygen pressure has a larger lattice parameter in the direction normal to the substrate surface, and the film has smaller grains and a smoother surface. The polarized Raman peaks of both as-deposited films show blue shifts and linewidth broadening in comparison to those of the BaTiO3 single crystal. The blue shifts are attributed to tensile stresses in the films. Our results indicate that the grain size increases and the tensile stress relaxes with annealing. We have shown that quantum confinement and oxygen vacancies are not the dominant factors for the observed Raman spectral changes.
收录类别SCI
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/53131]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Chen, MS,Shen, ZX,Tang, SH,et al. Stress effect on Raman spectra of Ce-doped BaTiO3 films[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,2000,12(31):7013.
APA Chen, MS,Shen, ZX,Tang, SH,Shi, WS,Cui, DF,&Chen, ZH.(2000).Stress effect on Raman spectra of Ce-doped BaTiO3 films.JOURNAL OF PHYSICS-CONDENSED MATTER,12(31),7013.
MLA Chen, MS,et al."Stress effect on Raman spectra of Ce-doped BaTiO3 films".JOURNAL OF PHYSICS-CONDENSED MATTER 12.31(2000):7013.

入库方式: OAI收割

来源:物理研究所

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