Stress reduction by ion bombardment in CeO2 films
文献类型：期刊论文
| 作者 | Wang, RP ; Pan, SH ; Zhou, YL |
| 刊名 | SOLID STATE COMMUNICATIONS
 |
| 出版日期 | 2000 |
| 卷号 | 114期号:11页码:613 |
| 关键词 | PULSED-LASER DEPOSITION THIN-FILMS NUCLEATION RELAXATION LAYERS |
| ISSN号 | 0038-1098 |
| 通讯作者 | Wang, RP (reprint author), Technion Israel Inst Technol, Dept Phys, IL-32000 Haifa, Israel. |
| 中文摘要 | We have investigated the influence of deposition parameters on film stress in CeO2 films grown on biaxially textured nickel (001) substrates using pulsed-laser deposition. The film stress is thought to consist of thermal stress and intrinsic stress. The thermal stress has been calculated at different deposition temperatures. The results reveal that the thermal stress is compressive with MPa order of magnitude and increases with increasing deposition temperature. The intrinsic stress has also been measured by standard X-ray diffraction technique. it has been found that the intrinsic stress is tensile with GPa order of magnitude, and decreases with increasing deposition temperature regardless of whether the films are deposited with ion bombardment or not. Moreover, this is the first time a quantitative confirmation of stress reduction with ion bombardment has been provided. Some possible origins of the influence of deposition parameters on film stress are discussed. (C) 2000 Published by Elsevier Science Ltd. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/53133]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, RP,Pan, SH,Zhou, YL. Stress reduction by ion bombardment in CeO2 films[J]. SOLID STATE COMMUNICATIONS,2000,114(11):613. |
| APA | Wang, RP,Pan, SH,&Zhou, YL.(2000).Stress reduction by ion bombardment in CeO2 films.SOLID STATE COMMUNICATIONS,114(11),613. |
| MLA | Wang, RP,et al."Stress reduction by ion bombardment in CeO2 films".SOLID STATE COMMUNICATIONS 114.11(2000):613. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。