Structural and optical characteristics of InGaN/GaN multi-quantum wells grown on a- and c-plane sapphire substrates
文献类型：期刊论文
| 作者 | Yu, HB ; Chen, H ; Li, DS ; Zhou, JM |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2004 |
| 卷号 | 21期号:7页码:1323 |
| 关键词 | MULTIPLE-QUANTUM WELLS MOLECULAR-BEAM EPITAXY GAN FILMS EXCITONS LAYERS |
| ISSN号 | 0256-307X |
| 通讯作者 | Yu, HB (reprint author), Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | We investigate the structural and optical properties of InGaN-based multi-quantum wells grown on a-c plane sapphire substrates by atomic force microscopy, high-resolution x-ray diffraction and temperature-dependent photoluminescence measurements. The multi-quantum wells grown on a-plane sapphire substrate show stronger exciton localization effect compared with that grown on the c-plane substrate, although the threading dislocation densities in the two samples are almost the same. We attribute the results to the different in-plane strain of quantum well grown on different substrate orientations at the same growth temperature. Since the exciton localization effect plays a key role to obtain high efficiency InGaN-based optoelectronics devices, the presented result should be emphasized. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/53248]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yu, HB,Chen, H,Li, DS,et al. Structural and optical characteristics of InGaN/GaN multi-quantum wells grown on a- and c-plane sapphire substrates[J]. CHINESE PHYSICS LETTERS,2004,21(7):1323. |
| APA | Yu, HB,Chen, H,Li, DS,&Zhou, JM.(2004).Structural and optical characteristics of InGaN/GaN multi-quantum wells grown on a- and c-plane sapphire substrates.CHINESE PHYSICS LETTERS,21(7),1323. |
| MLA | Yu, HB,et al."Structural and optical characteristics of InGaN/GaN multi-quantum wells grown on a- and c-plane sapphire substrates".CHINESE PHYSICS LETTERS 21.7(2004):1323. |
入库方式： OAI收割
来源：物理研究所
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