Structural characterization of stable amorphous silicon films
文献类型：期刊论文
| 作者 | Zhang, SB ; Kong, GL ; Wang, YQ ; Sheng, SR ; Liao, XB |
| 刊名 | SOLID STATE COMMUNICATIONS
 |
| 出版日期 | 2002 |
| 卷号 | 122期号:5页码:283 |
| 关键词 | CONDUCTIVITY SI |
| ISSN号 | 0038-1098 |
| 通讯作者 | Zhang, SB (reprint author), Chinese Acad Sci, Inst Semicond, State Lab Surface Phys, POB 912, Beijing 100083, Peoples R China. |
| 中文摘要 | A kind of hydrogenated diphasic, silicon films has been prepared by a new regime of plasma enhanced chemical vapor deposition (PECVD) in the region adjacent to the phase transition from amorphous to crystalline state. The photoelectronic and microstructural properties of the films have been investigated by the constant photocurrent method (CPM), Raman scattering and nuclear magnetic resonance (NMR). Our experimental results and corresponding analyses showed that the diphasic films, incorporated with a subtle boron compensation, could gain both the fine photosensitivity and high stability, provided the crystalline fraction (f) was controlled in the range of 0 < f < 0.3. When compared with the conventional hydrogenated amorphous silicon (a-Si:H), the diphasic films are more ordered and robust in the microstructure, and have a less clustered phase in the Si-H bond configurations. (C) 2002 Elsevier Science Ltd. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/53290]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, SB,Kong, GL,Wang, YQ,et al. Structural characterization of stable amorphous silicon films[J]. SOLID STATE COMMUNICATIONS,2002,122(5):283. |
| APA | Zhang, SB,Kong, GL,Wang, YQ,Sheng, SR,&Liao, XB.(2002).Structural characterization of stable amorphous silicon films.SOLID STATE COMMUNICATIONS,122(5),283. |
| MLA | Zhang, SB,et al."Structural characterization of stable amorphous silicon films".SOLID STATE COMMUNICATIONS 122.5(2002):283. |
入库方式： OAI收割
来源：物理研究所
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