中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Structural defects and electronic properties of the Cu-doped topological insulator Bi2Se3

文献类型:期刊论文

作者Wang, YL ; Xu, Y ; Jiang, YP ; Liu, JW ; Chang, CZ ; Chen, M ; Li, Z ; Song, CL ; Wang, LL ; He, K ; Chen, X ; Duan, WH ; Xue, QK ; Ma, XC
刊名PHYSICAL REVIEW B
出版日期2011
卷号84期号:7
关键词BI2TE3 SINGLE-CRYSTALS BISMUTH TELLURIDE DIRAC CONE COPPER SURFACE
ISSN号1098-0121
通讯作者Wang, YL (reprint author), Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100190, Peoples R China.
中文摘要Motivated by the occurrence of superconductivity transition in Cu-doped topological insulator Bi2Se3, we perform a combined study of low temperature scanning tunneling microscopy/spectroscopy and angle-resolved photoemission spectroscopy experiments and of ab initio density functional theory to clarify the doping nature of Cu atoms in Bi2Se3 films. By measuring the structural and electronic properties of the Cu-doped Bi2Se3 films at different doping temperatures, we find that Cu atoms behave as donors at intercalated and interstitial sites in Bi2Se3 films. Only the interstitial defect density plays an important role in the observation of Landau quantization of the topological surface states in Bi2Se3.
收录类别SCI
资助信息China's National Natural Science Foundation; Ministry of Science and Technology of China; Chinese Academy of Sciences
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/53293]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Wang, YL,Xu, Y,Jiang, YP,et al. Structural defects and electronic properties of the Cu-doped topological insulator Bi2Se3[J]. PHYSICAL REVIEW B,2011,84(7).
APA Wang, YL.,Xu, Y.,Jiang, YP.,Liu, JW.,Chang, CZ.,...&Ma, XC.(2011).Structural defects and electronic properties of the Cu-doped topological insulator Bi2Se3.PHYSICAL REVIEW B,84(7).
MLA Wang, YL,et al."Structural defects and electronic properties of the Cu-doped topological insulator Bi2Se3".PHYSICAL REVIEW B 84.7(2011).

入库方式: OAI收割

来源:物理研究所

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