Structural defects and electronic properties of the Cu-doped topological insulator Bi2Se3
文献类型:期刊论文
作者 | Wang, YL ; Xu, Y ; Jiang, YP ; Liu, JW ; Chang, CZ ; Chen, M ; Li, Z ; Song, CL ; Wang, LL ; He, K ; Chen, X ; Duan, WH ; Xue, QK ; Ma, XC |
刊名 | PHYSICAL REVIEW B
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出版日期 | 2011 |
卷号 | 84期号:7 |
关键词 | BI2TE3 SINGLE-CRYSTALS BISMUTH TELLURIDE DIRAC CONE COPPER SURFACE |
ISSN号 | 1098-0121 |
通讯作者 | Wang, YL (reprint author), Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100190, Peoples R China. |
中文摘要 | Motivated by the occurrence of superconductivity transition in Cu-doped topological insulator Bi2Se3, we perform a combined study of low temperature scanning tunneling microscopy/spectroscopy and angle-resolved photoemission spectroscopy experiments and of ab initio density functional theory to clarify the doping nature of Cu atoms in Bi2Se3 films. By measuring the structural and electronic properties of the Cu-doped Bi2Se3 films at different doping temperatures, we find that Cu atoms behave as donors at intercalated and interstitial sites in Bi2Se3 films. Only the interstitial defect density plays an important role in the observation of Landau quantization of the topological surface states in Bi2Se3. |
收录类别 | SCI |
资助信息 | China's National Natural Science Foundation; Ministry of Science and Technology of China; Chinese Academy of Sciences |
语种 | 英语 |
公开日期 | 2013-09-24 |
源URL | [http://ir.iphy.ac.cn/handle/311004/53293] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Wang, YL,Xu, Y,Jiang, YP,et al. Structural defects and electronic properties of the Cu-doped topological insulator Bi2Se3[J]. PHYSICAL REVIEW B,2011,84(7). |
APA | Wang, YL.,Xu, Y.,Jiang, YP.,Liu, JW.,Chang, CZ.,...&Ma, XC.(2011).Structural defects and electronic properties of the Cu-doped topological insulator Bi2Se3.PHYSICAL REVIEW B,84(7). |
MLA | Wang, YL,et al."Structural defects and electronic properties of the Cu-doped topological insulator Bi2Se3".PHYSICAL REVIEW B 84.7(2011). |
入库方式: OAI收割
来源:物理研究所
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