中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Structural evolution in the graphitization process of activated carbon by high-pressure sintering

文献类型:期刊论文

作者Zhao, JG ; Yang, LX ; Li, FY ; Yu, RC ; Jin, CQ
刊名CARBON
出版日期2009
卷号47期号:3页码:744
关键词METAL-INSULATOR-TRANSITION GLASSY-CARBON NANOGRAPHITE RIBBONS ELECTRICAL-PROPERTIES STACKED NANOGRAPHITE RAMAN-SPECTROSCOPY AMORPHOUS-CARBON GRAPHITE DIFFRACTION NANOTUBES
ISSN号0008-6223
通讯作者Jin, CQ (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要Activated carbon was treated at 5 GPa up to 1600 degrees C, and the structural evolution in the graphitization process was investigated. The graphitization temperature is equal to 1200 degrees C at 5 GPa, reflected by X-ray diffraction (XRD) patterns. Honeycomb-like structures in micron scale come into being in the high-pressure sintering temperature range of 1000-1100 degrees C and slice-like structures appear after graphitization. The existence of D and D'lines in the Raman spectra for the graphitized-activated carbon indicates that there are still some disordered structures. The continuous occurrence of variable-range hopping, the approximately linear rho-T relationship, and semimetal conduction mechanism accords with the graphitization process. (C) 2008 Elsevier Ltd. All rights reserved.
收录类别SCI
资助信息NSF; Ministry of Science and Technology of China
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/53303]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Zhao, JG,Yang, LX,Li, FY,et al. Structural evolution in the graphitization process of activated carbon by high-pressure sintering[J]. CARBON,2009,47(3):744.
APA Zhao, JG,Yang, LX,Li, FY,Yu, RC,&Jin, CQ.(2009).Structural evolution in the graphitization process of activated carbon by high-pressure sintering.CARBON,47(3),744.
MLA Zhao, JG,et al."Structural evolution in the graphitization process of activated carbon by high-pressure sintering".CARBON 47.3(2009):744.

入库方式: OAI收割

来源:物理研究所

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