Structural transformation of Ge dimers on Ge(001) surfaces induced by bias voltage
文献类型：期刊论文
| 作者 | Qin, ZH ; Shi, DX ; Gao, HJ |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2008 |
| 卷号 | 17期号:12页码:4580 |
| 关键词 | SCANNING-TUNNELING-MICROSCOPY SI(001) SURFACE CLEAN GE(001) STM TRANSITIONS CLUSTERS SCALE |
| ISSN号 | 1674-1056 |
| 通讯作者 | Gao, HJ (reprint author), Chinese Acad Sci, Inst Phys, Nanoscale Phys & Devices Lab, Beijing 100190, Peoples R China. |
| 中文摘要 | Scanning tunnelling microscopy is utilized to investigate the local bias voltage tunnelling dependent transformation between (2x1) and c(4x2) structures on Ge(001) surfaces, which is reversibly observed at room temperature and a critical bias voltage of -0.80V. Similar transformation is also found on an epitaxial Ge islands but at a slightly different critical bias voltage of -1.00V. It is found that the interaction between the topmost atoms on the STM tip and the atoms of the dimers, and the pinning effect induced bby Sb stoms, the vacancies or the epitaxial clusters, can drive the structural transformation at the critical bias voltage. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [90406022, 10674159, 60771037]; National Basic Research Program of China [2006CB921305] |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/53383]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Qin, ZH,Shi, DX,Gao, HJ. Structural transformation of Ge dimers on Ge(001) surfaces induced by bias voltage[J]. CHINESE PHYSICS B,2008,17(12):4580. |
| APA | Qin, ZH,Shi, DX,&Gao, HJ.(2008).Structural transformation of Ge dimers on Ge(001) surfaces induced by bias voltage.CHINESE PHYSICS B,17(12),4580. |
| MLA | Qin, ZH,et al."Structural transformation of Ge dimers on Ge(001) surfaces induced by bias voltage".CHINESE PHYSICS B 17.12(2008):4580. |
入库方式： OAI收割
来源：物理研究所
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