Structure and characteristics of ultrathin indium tin oxide films
文献类型：期刊论文
| 作者 | Guo, EJ ; Guo, HZ ; Lu, HB ; Jin, KJ ; He, M ; Yang, GZ |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2011 |
| 卷号 | 98期号:1 |
| 关键词 | THICKNESS DEPENDENCE PHOTODETECTORS ELECTRODE |
| ISSN号 | 0003-6951 |
| 通讯作者 | Lu, HB (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | A series of indium tin oxide (ITO) thin-films with various thicknesses from 2 to 200 monolayers (ML) have been epitaxially grown on LaAlO(3) substrates by laser molecular-beam epitaxy. The measurements of x-ray diffraction, atomic force microscopy, four-probe method, and optical transmittance reveal that the film thickness strongly affects the structural, electrical, and optical properties of ITO thin-films, and the ITO thin-films exist at a critical thickness of metal-insulator transition at about 4-5 ML. The electrical transport property has been discussed with the different conductive models. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3536531] |
| 收录类别 | SCI |
| 资助信息 | National Basic Research Program of China; National Natural Science Foundation of China |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/53419]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Guo, EJ,Guo, HZ,Lu, HB,et al. Structure and characteristics of ultrathin indium tin oxide films[J]. APPLIED PHYSICS LETTERS,2011,98(1). |
| APA | Guo, EJ,Guo, HZ,Lu, HB,Jin, KJ,He, M,&Yang, GZ.(2011).Structure and characteristics of ultrathin indium tin oxide films.APPLIED PHYSICS LETTERS,98(1). |
| MLA | Guo, EJ,et al."Structure and characteristics of ultrathin indium tin oxide films".APPLIED PHYSICS LETTERS 98.1(2011). |
入库方式： OAI收割
来源：物理研究所
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