中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Structure and Debye temperature of wurtzite GaN

文献类型:期刊论文

作者Chen, XL ; Liang, JK ; Xu, YP ; Xu, T ; Jiang, PZ ; Yu, YD ; Lu, KQ
刊名MODERN PHYSICS LETTERS B
出版日期1999
卷号13期号:9-10页码:285
关键词LIGHT-EMITTING-DIODES HIGH-PRESSURE PHASE GALLIUM NITRIDE TRANSITION GROWTH BLUE
ISSN号0217-9849
通讯作者Chen, XL (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要High Pure Wurtzite structure GaN has been synthesized by gas reaction method. Its structure was determined by powder X-ray diffraction using the Rietveld technique. The positions in the unit cell for Ga and N were refined to be (0, 0, 0) and (0, 0, 0.3814). The Debye temperature was determined as 586 K from the refined temperature factor by using the Debye approximation.
收录类别SCI
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/53424]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Chen, XL,Liang, JK,Xu, YP,et al. Structure and Debye temperature of wurtzite GaN[J]. MODERN PHYSICS LETTERS B,1999,13(9-10):285.
APA Chen, XL.,Liang, JK.,Xu, YP.,Xu, T.,Jiang, PZ.,...&Lu, KQ.(1999).Structure and Debye temperature of wurtzite GaN.MODERN PHYSICS LETTERS B,13(9-10),285.
MLA Chen, XL,et al."Structure and Debye temperature of wurtzite GaN".MODERN PHYSICS LETTERS B 13.9-10(1999):285.

入库方式: OAI收割

来源:物理研究所

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