中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Structure and heat capacity of wurtzite GaN from 113 to 1073 K

文献类型:期刊论文

作者Chen, XL ; Lan, YC ; Liang, JK ; Cheng, XR ; Cu, YP ; Xu, T ; Jiang, PZ ; Lu, KQ
刊名CHINESE PHYSICS LETTERS
出版日期1999
卷号16期号:2页码:107
关键词LIGHT-EMITTING-DIODES HIGH-PRESSURE PHASE GALLIUM NITRIDE TRANSITION
ISSN号0256-307X
通讯作者Chen, XL (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要High pure wurtzite structure GaN has been synthesized by gas reaction method. Its structure was determined by powder x-ray diffraction using the Rietveld technique. The heat capacity C-p was measured from 113 to 1073 K, which can be represented by C-p = 0.362 + 3.010 x 10(-4)T - 3.411 x 10(3)T(-2) - 7.791 x 10(-8)T(2). NO measurable phase transition was observed in this temperature range.
收录类别SCI
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/53432]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Chen, XL,Lan, YC,Liang, JK,et al. Structure and heat capacity of wurtzite GaN from 113 to 1073 K[J]. CHINESE PHYSICS LETTERS,1999,16(2):107.
APA Chen, XL.,Lan, YC.,Liang, JK.,Cheng, XR.,Cu, YP.,...&Lu, KQ.(1999).Structure and heat capacity of wurtzite GaN from 113 to 1073 K.CHINESE PHYSICS LETTERS,16(2),107.
MLA Chen, XL,et al."Structure and heat capacity of wurtzite GaN from 113 to 1073 K".CHINESE PHYSICS LETTERS 16.2(1999):107.

入库方式: OAI收割

来源:物理研究所

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