中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Structure stability of LaAlO3 thin films on Si substrates

文献类型:期刊论文

作者He, M ; Liu, GZ ; Xiang, WF ; Lu, HB ; Jin, KJ ; Zhou, YL ; Yang, GZ
刊名CHINESE PHYSICS LETTERS
出版日期2007
卷号24期号:9页码:2671
ISSN号0256-307X
中文摘要A series of amorphous and single-crystalline LaAlO3 (LAO) thin Elms are fabricated by laser molecular-beam epitaxy technique on Si substrates under various conditions of deposition. The structure stability of the LAO films annealed in high temperature and various ambients is studied by x-ray diffraction as well as high-resolution transmission election microscopy. The results show that the epitaxial LAO films have very good stability, and the structures of amorphous LAO thin films depend strongly on the conditions of deposition and post-annealing. The results reveal that the formation of LAO composition during the deposition is very important for the structure stability of LAO thin Elms.
收录类别SCI
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/53608]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
He, M,Liu, GZ,Xiang, WF,et al. Structure stability of LaAlO3 thin films on Si substrates[J]. CHINESE PHYSICS LETTERS,2007,24(9):2671.
APA He, M.,Liu, GZ.,Xiang, WF.,Lu, HB.,Jin, KJ.,...&Yang, GZ.(2007).Structure stability of LaAlO3 thin films on Si substrates.CHINESE PHYSICS LETTERS,24(9),2671.
MLA He, M,et al."Structure stability of LaAlO3 thin films on Si substrates".CHINESE PHYSICS LETTERS 24.9(2007):2671.

入库方式: OAI收割

来源:物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。