Studies of the interfacial structure of LaAlO3 thin films on silicon by x-ray reflectivity and angle-resolved x-ray photoelectron spectroscopy
文献类型：期刊论文
| 作者 | Li, XL ; Xiang, WF ; Lu, HB ; Mai, ZH |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2005 |
| 卷号 | 97期号:12 |
| 关键词 | GATE DIELECTRICS STABILITY SI(001) SIO2 DEPOSITION OXIDES LAYERS |
| ISSN号 | 0021-8979 |
| 通讯作者 | Li, XL (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | The microstructures of amorphous LaAlO3 thin films deposited on silicon substrates by the laser molecular-beam epitaxy were studied by the x-ray reflectivity and the angle-resolved x-ray photoelectron spectroscopy. It was shown that the film/substrate interface contains a La-rich LaxAlyOzSi layer and a SiOx layer. It was shown that the electron density of the LaAlO3 layer and the LaxAlyOzSi layer is not homogeneous along the growth direction due to the diffusion of La, Al, and Si. The growth kinetics of the LaAlO3 film was described by three processes: (1) formation of the SiOx layer at the early stage whose thickness saturates rapidly at about 13 angstrom; (2) formation of the LaxAlyOzSi layer by the out diffusion of Si and the inner diffusion of La, Al (mostly La). This stage continues as the film grows (3) In the deposition process of LaAlO3, the distributions of La and Al in the LaAlO3 layer change from inhomogeneous to homogeneous. (c) 2005 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/53691]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, XL,Xiang, WF,Lu, HB,et al. Studies of the interfacial structure of LaAlO3 thin films on silicon by x-ray reflectivity and angle-resolved x-ray photoelectron spectroscopy[J]. JOURNAL OF APPLIED PHYSICS,2005,97(12). |
| APA | Li, XL,Xiang, WF,Lu, HB,&Mai, ZH.(2005).Studies of the interfacial structure of LaAlO3 thin films on silicon by x-ray reflectivity and angle-resolved x-ray photoelectron spectroscopy.JOURNAL OF APPLIED PHYSICS,97(12). |
| MLA | Li, XL,et al."Studies of the interfacial structure of LaAlO3 thin films on silicon by x-ray reflectivity and angle-resolved x-ray photoelectron spectroscopy".JOURNAL OF APPLIED PHYSICS 97.12(2005). |
入库方式： OAI收割
来源：物理研究所
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