Study of band structure InxGa1-xN/GaN multiple quantum wells by high-resolution electron microscopy and electron holography
文献类型：期刊论文
| 作者 | Lu, W ; Li, CR ; Zhang, Z |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2005 |
| 卷号 | 86期号:4 |
| 关键词 | CRITICAL LAYER THICKNESS VAPOR-PHASE EPITAXY GAN INTERFACES DENSITY STRAIN |
| ISSN号 | 0003-6951 |
| 通讯作者 | Li, CR (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Two InxGaN1-x/GaN (x=0.15 and 0.18) multiple-quantum-well samples with strained-layer thickness larger/less than the critical thickness, respectively, were investigated by high-resolution electron microscopy, electron holography, and photoluminescence (PL). The PL intensity of the sample with strained-layer thickness larger than the critical thickness was weaker than that of the sample with strained-layer thickness less than the critical thickness by five times. Electron holography revealed that the profiles of the inner potential V-0 across the quantum wells GaN/InxGaN1-x/GaN of the samples were not too different. The well feature of the sample with strained-layer thickness larger than the critical thickness was very blurry, especially near the top GaN/InGaN interface. It is suggested that the interface sharpness is most critical for optical property of quantum well devices. (C) 2005 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/53730]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Lu, W,Li, CR,Zhang, Z. Study of band structure InxGa1-xN/GaN multiple quantum wells by high-resolution electron microscopy and electron holography[J]. APPLIED PHYSICS LETTERS,2005,86(4). |
| APA | Lu, W,Li, CR,&Zhang, Z.(2005).Study of band structure InxGa1-xN/GaN multiple quantum wells by high-resolution electron microscopy and electron holography.APPLIED PHYSICS LETTERS,86(4). |
| MLA | Lu, W,et al."Study of band structure InxGa1-xN/GaN multiple quantum wells by high-resolution electron microscopy and electron holography".APPLIED PHYSICS LETTERS 86.4(2005). |
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来源：物理研究所
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