Study of microstructure of high stability hydrogenated amorphous silicon films by Raman scattering and infrared absorption spectroscopy
文献类型：期刊论文
| 作者 | Sheng, SR ; Liao, XB ; Kong, GL ; Han, HX |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 1998 |
| 卷号 | 73期号:3页码:336 |
| 关键词 | A-SI-H CRYSTALLINE SILICON DEPOSITION SPECTRA QUALITY |
| ISSN号 | 0003-6951 |
| 通讯作者 | Sheng, SR (reprint author), Ecole Polytech, Couches Minces Grp, CP 6079,Ctr Ville, Montreal, PQ H3C 3A7, Canada. |
| 中文摘要 | The microstructure, hydrogen bonding configurations and hydrogen content of high quality and stable hydrogenated amorphous silicon (a-Si:H) films prepared by a simple ''uninterrupted growth/annealing" plasma enhanced chemical vapor deposition technique have been investigated by Raman scattering and infrared absorption spectroscopy. The high stability a-Si:H films contain small amounts of a microcrystalline phase and not less hydrogen (10-16 at. %), particularly, the clustered phase hydrogen, Besides, the hydrogen distribution is very inhomogeneous. Some of these results are substantially distinct from those of conventional device-quality n-Si:H film or stable cr-Si:H films prepared by the other techniques examined to date. The stability of n-Si:H films appears to have no direct correlation with the hydrogen content or the clustered phase hydrogen concentration. The ideal n-Si:H network with high stability and low defect density is perhaps not homogeneous. (C) 1998 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/53770]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Sheng, SR,Liao, XB,Kong, GL,et al. Study of microstructure of high stability hydrogenated amorphous silicon films by Raman scattering and infrared absorption spectroscopy[J]. APPLIED PHYSICS LETTERS,1998,73(3):336. |
| APA | Sheng, SR,Liao, XB,Kong, GL,&Han, HX.(1998).Study of microstructure of high stability hydrogenated amorphous silicon films by Raman scattering and infrared absorption spectroscopy.APPLIED PHYSICS LETTERS,73(3),336. |
| MLA | Sheng, SR,et al."Study of microstructure of high stability hydrogenated amorphous silicon films by Raman scattering and infrared absorption spectroscopy".APPLIED PHYSICS LETTERS 73.3(1998):336. |
入库方式： OAI收割
来源：物理研究所
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