Study of strained-silicon channel metal-oxide-semiconductor field effect transistors by large angle convergent-beam electron diffraction
文献类型：期刊论文
| 作者 | Liu, HH ; Duan, XF ; Xu, QX ; Liu, BG |
| 刊名 | ULTRAMICROSCOPY
 |
| 出版日期 | 2008 |
| 卷号 | 108期号:9页码:816 |
| 关键词 | LAYER SUPERLATTICES MOBILITY ENHANCEMENT ELASTIC RELAXATION SPECIMENS CRYSTALS |
| ISSN号 | 0304-3991 |
| 通讯作者 | Duan, XF (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Strained-silicon p-type metal-oxide-semiconductor field effect transistors (pMOSFETs) have been investigated by large angle convergent-beam electron diffraction (LACBED). Longitudinal compressive strain is induced into the channel region of a p-type strained-silicon channel metal-oxide-semiconductor field effect transistor by a low-cost Ge pre-amorphization implantation for source/drain extension flow. Anomalously large longitudinal compressive strain, Lip to 2.5 x 10(-2). in the nanometer scale channel region of pMOSFETs has been measured using LACBED. We propose a novel scaling effect for the giant strain enhancement. Our experimental results and model analysis together reveal that the channel strain is inversely proportional to the shrinking channel length. (c) 2008 Published by Elsevier B.V. |
| 收录类别 | SCI |
| 资助信息 | Ministry of Science and Technology of China [2001CB610502, G2000036504, 2007CB936301] |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/53784]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, HH,Duan, XF,Xu, QX,et al. Study of strained-silicon channel metal-oxide-semiconductor field effect transistors by large angle convergent-beam electron diffraction[J]. ULTRAMICROSCOPY,2008,108(9):816. |
| APA | Liu, HH,Duan, XF,Xu, QX,&Liu, BG.(2008).Study of strained-silicon channel metal-oxide-semiconductor field effect transistors by large angle convergent-beam electron diffraction.ULTRAMICROSCOPY,108(9),816. |
| MLA | Liu, HH,et al."Study of strained-silicon channel metal-oxide-semiconductor field effect transistors by large angle convergent-beam electron diffraction".ULTRAMICROSCOPY 108.9(2008):816. |
入库方式： OAI收割
来源：物理研究所
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