Study of the Al/graphite interface
文献类型：期刊论文
| 作者 | Lu, H ; Shen, DH ; Deng, XF ; Xue, QK ; Froumin, N ; Polak, M |
| 刊名 | CHINESE PHYSICS
 |
| 出版日期 | 2001 |
| 卷号 | 10期号:9页码:832 |
| 关键词 | AL4C3 |
| ISSN号 | 1009-1963 |
| 通讯作者 | Lu, H (reprint author), Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Thin Al films with a thickness of 20-30nm were prepared by ultra-high vacuum deposition of Al onto a graphite surface parallel to a (0001) basal plane. The samples, were annealed up to 1070K. X-ray photoelectron spectroscopy analysis has shown that for temperatures just higher than 770K, a little carbide occurs in the Al film and only an AI-C phase is present at the Al/graphite interface. After annealing at 970K, the Al4C3 phase can be observed, and the binding energy of the Al2p electrons increases continuously from 72.7 to 74.2eV with increasing temperature up to 1070K. Auger electron spectroscopy depth profiles are measured to investigate the phases existing in the Al film as well as at the Al/graphite interface. It is found that the Al4O3, phase at the interface is the final product of a series of Al carbides from the interfacial reaction between Al and graphite. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/53794]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Lu, H,Shen, DH,Deng, XF,et al. Study of the Al/graphite interface[J]. CHINESE PHYSICS,2001,10(9):832. |
| APA | Lu, H,Shen, DH,Deng, XF,Xue, QK,Froumin, N,&Polak, M.(2001).Study of the Al/graphite interface.CHINESE PHYSICS,10(9),832. |
| MLA | Lu, H,et al."Study of the Al/graphite interface".CHINESE PHYSICS 10.9(2001):832. |
入库方式： OAI收割
来源：物理研究所
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