STUDY OF THERMAL-BEHAVIOR OF OXYGEN IN SILICON-CRYSTALS BY ANALYSIS OF X-RAY PENDELLOSUNG FRINGES
文献类型：期刊论文
| 作者 | MING, L ; MAI, ZH ; CUI, SF |
| 刊名 | ACTA CRYSTALLOGRAPHICA SECTION A
 |
| 出版日期 | 1994 |
| 卷号 | 50页码:725 |
| 关键词 | STATISTICAL DYNAMICAL THEORY DEBYE-WALLER FACTOR DIFFRACTION DEFECTS |
| ISSN号 | 0108-7673 |
| 通讯作者 | MING, L (reprint author), CHINESE ACAD SCI,INST PHYS,POB 603,BEIJING 100080,PEOPLES R CHINA. |
| 中文摘要 | The thermal behaviour of oxygen in Czochralski (CZ) silicon and magnetic Czochralski (MCZ) silicon crystals was investigated by analysis of Pendellosung fringes based on the statistical theory of X-ray dynamical diffraction. The size and the density of oxygen precipitates were determined for different annealing temperatures and/or different times. It was observed that oxide precipitates in the samples increase in size and decrease in density with time during isothermal annealing at 1023 K. The precipitation in MCZ silicon approaches saturation level after annealing for 250 h. It was found that the size of precipitates increases rapidly with annealing temperature in isochronal annealing for 18 h. Comparison of the results of MCZ silicons with those of CZ silicons shows that MCZ crystals are thermally more stable. This suggests that magnetic fields can control the oxygen concentration effectively and that the MCZ and CZ silicon have different thermal behaviours. A powerful technique for detecting microdefects of nanometre size and random distribution is described. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/53819]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | MING, L,MAI, ZH,CUI, SF. STUDY OF THERMAL-BEHAVIOR OF OXYGEN IN SILICON-CRYSTALS BY ANALYSIS OF X-RAY PENDELLOSUNG FRINGES[J]. ACTA CRYSTALLOGRAPHICA SECTION A,1994,50:725. |
| APA | MING, L,MAI, ZH,&CUI, SF.(1994).STUDY OF THERMAL-BEHAVIOR OF OXYGEN IN SILICON-CRYSTALS BY ANALYSIS OF X-RAY PENDELLOSUNG FRINGES.ACTA CRYSTALLOGRAPHICA SECTION A,50,725. |
| MLA | MING, L,et al."STUDY OF THERMAL-BEHAVIOR OF OXYGEN IN SILICON-CRYSTALS BY ANALYSIS OF X-RAY PENDELLOSUNG FRINGES".ACTA CRYSTALLOGRAPHICA SECTION A 50(1994):725. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。