Study on Er3+ emission from the erbium-doped hydrogenated amorphous silicon suboxide film
文献类型：期刊论文
| 作者 | Chen, CY ; Chen, WD ; Song, SF ; Xu, ZJ ; Liao, XB ; Li, GH ; Ding, K |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2003 |
| 卷号 | 94期号:9页码:5599 |
| 关键词 | THIN-FILMS SI NANOPARTICLES PHOTOLUMINESCENCE NANOCRYSTALS EXCITATION LUMINESCENCE SIO2-FILMS OXYGEN BOND |
| ISSN号 | 0021-8979 |
| 通讯作者 | Chen, CY (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, POB 912, Beijing 100083, Peoples R China. |
| 中文摘要 | The erbium-doped hydrogenated amorphous silicon suboxide films containing amorphous silicon clusters were prepared. The samples exhibited photoluminescence peaks at around 750 nm and 1.54 mum, which could be assigned to the electron-hole recombination in amorphous silicon clusters and the intra-4f transition in Er3+, respectively. Correlations between the intensities of these two photoluminescence peaks and oxidation and dehydrogenation of the films during annealing were studied. It was found that the oxidation is triggered by dehydrogenation of the films even at low annealing temperatures, which decisively changes the intensities of the two photoluminescence peaks. On the other hand, the increase of Er content in the erbium-doped hydrogenated amorphous silicon suboxide film will enhance Er3+ emission at 1.54 mum, while quench amorphous silicon cluster emission at 750 nm, such a competitive relationship, was also observed in the erbium-doped silicon nanocrystals embedded in SiO2 matrix. Moreover, we found that Er3+ emission is not sensitive to whether silicon clusters are crystalline or amorphous. The amorphous silicon clusters can be as sensitizer on Er3+ emission as that of silicon nanocrystals. (C) 2003 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/53835]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, CY,Chen, WD,Song, SF,et al. Study on Er3+ emission from the erbium-doped hydrogenated amorphous silicon suboxide film[J]. JOURNAL OF APPLIED PHYSICS,2003,94(9):5599. |
| APA | Chen, CY.,Chen, WD.,Song, SF.,Xu, ZJ.,Liao, XB.,...&Ding, K.(2003).Study on Er3+ emission from the erbium-doped hydrogenated amorphous silicon suboxide film.JOURNAL OF APPLIED PHYSICS,94(9),5599. |
| MLA | Chen, CY,et al."Study on Er3+ emission from the erbium-doped hydrogenated amorphous silicon suboxide film".JOURNAL OF APPLIED PHYSICS 94.9(2003):5599. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。