Study on the interface structure: Diamond thin film epitaxy on (001) silicon substrate
文献类型：期刊论文
| 作者 | Meng, QB ; Fei, YJ ; Kang, J ; Xiong, YY ; Lin, ZD ; Feng, KA |
| 刊名 | MODERN PHYSICS LETTERS B
 |
| 出版日期 | 1999 |
| 卷号 | 13期号:3-4页码:125 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION ORIENTED DIAMOND GROWTH NUCLEATION LAYERS BIAS |
| ISSN号 | 0217-9849 |
| 通讯作者 | Meng, QB (reprint author), Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, POB 603, Beijing 10008, Peoples R China. |
| 中文摘要 | An interesting interface structure between diamond film and silicon substrate has been observed. That is, according to the deformation of the diamond film crystal sturcture, a strictly 3:2 matching of the two lattices across the interface is obtained. This result clearly indicates that misfit dislocations at the interface and "epitaxial tilting" are not the only two ways to overcome the 1.5% residual misfit. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/53859]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Meng, QB,Fei, YJ,Kang, J,et al. Study on the interface structure: Diamond thin film epitaxy on (001) silicon substrate[J]. MODERN PHYSICS LETTERS B,1999,13(3-4):125. |
| APA | Meng, QB,Fei, YJ,Kang, J,Xiong, YY,Lin, ZD,&Feng, KA.(1999).Study on the interface structure: Diamond thin film epitaxy on (001) silicon substrate.MODERN PHYSICS LETTERS B,13(3-4),125. |
| MLA | Meng, QB,et al."Study on the interface structure: Diamond thin film epitaxy on (001) silicon substrate".MODERN PHYSICS LETTERS B 13.3-4(1999):125. |
入库方式： OAI收割
来源：物理研究所
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