Superconducting film injected by ions from pulsed energetic dense plasma source
文献类型：期刊论文
| 作者 | Xu, FZ ; Chen, GH ; Yang, QS ; Ye, MF ; Li, YA |
| 刊名 | CHINESE PHYSICS
 |
| 出版日期 | 2001 |
| 卷号 | 10期号:11页码:1049 |
| 关键词 | IMPLANTATION |
| ISSN号 | 1009-1963 |
| 通讯作者 | Xu, FZ (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | The oxygen and silicon ions have been obtained respectively from pulsed energetic dense oxygen plasma and silane plasma generated by electrodeless discharge. The oxygen ions have been injected into superconducting Nb films, and the Si ions into superconducting YBCO films in order to investigate the variation of their superconductivity with the ions injected into them. Auger profile data show that the injection depths range from 20 to 40nm the films, depending on the injection condition and film material. The resistance-temperature relations (R-T curves) indicate that the superconductivity remains unchanged in the photoresist-masked part of the film, but is significantly changed in the exposed part. The evenness of the film surface remains unchanged after injection. This technique may serve as an alternative to the planar inhibiting fabrication technique in the fabrication of the multi-layer structure of superconducting films, and also possibly to the conventional plasma source ion implantation technique in material surface processing. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/53955]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xu, FZ,Chen, GH,Yang, QS,et al. Superconducting film injected by ions from pulsed energetic dense plasma source[J]. CHINESE PHYSICS,2001,10(11):1049. |
| APA | Xu, FZ,Chen, GH,Yang, QS,Ye, MF,&Li, YA.(2001).Superconducting film injected by ions from pulsed energetic dense plasma source.CHINESE PHYSICS,10(11),1049. |
| MLA | Xu, FZ,et al."Superconducting film injected by ions from pulsed energetic dense plasma source".CHINESE PHYSICS 10.11(2001):1049. |
入库方式： OAI收割
来源：物理研究所
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