Superconductivity, Hall properties and disorder effect in Pr1-xCaxBa2Cu3O7-delta (0.4 <= x <= 0.6) epitaxial thin films
文献类型：期刊论文
| 作者 | Li, SL ; Li, J ; Xiang, JY ; Chu, HF ; Li, S ; Wang, P ; Zheng, DN |
| 刊名 | SUPERCONDUCTOR SCIENCE & TECHNOLOGY
 |
| 出版日期 | 2008 |
| 卷号 | 21期号:3 |
| ISSN号 | 0953-2048 |
| 中文摘要 | Superconducting Pr1-xCaxBa2Cu3O7-delta (PCBCO) thin films with high Ca concentration (0.4 <= x <= 0.6) have been prepared. As characterized by x-ray diffraction, good quality c-axis and a-axis oriented epitaxial thin films are grown on SrTiO3 substrates by changing the substrate temperature. However, for each Ca concentration, higher zero resistance temperature (T-C0) is generally observed in samples with mixed orientations grown at moderate temperatures. The best T-C0 are 26.5 K, 34.1 K and 16.8 K for x = 0.4, 0.5 and 0.6 samples, respectively. Hall measurements reveal that the hole mobility decreases as x increases, while the Hall number n(H) reaches a maximum as x approaches 0.5, then reduces dramatically. It appears that the T-2 dependence of cot theta(H) is still feasible in this system, and the effect of Ca substitution on transport properties in PCBCO is a result of the competition between carrier introduction and carrier localization. |
| 收录类别 | SCI |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/54095]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, SL,Li, J,Xiang, JY,et al. Superconductivity, Hall properties and disorder effect in Pr1-xCaxBa2Cu3O7-delta (0.4 <= x <= 0.6) epitaxial thin films[J]. SUPERCONDUCTOR SCIENCE & TECHNOLOGY,2008,21(3). |
| APA | Li, SL.,Li, J.,Xiang, JY.,Chu, HF.,Li, S.,...&Zheng, DN.(2008).Superconductivity, Hall properties and disorder effect in Pr1-xCaxBa2Cu3O7-delta (0.4 <= x <= 0.6) epitaxial thin films.SUPERCONDUCTOR SCIENCE & TECHNOLOGY,21(3). |
| MLA | Li, SL,et al."Superconductivity, Hall properties and disorder effect in Pr1-xCaxBa2Cu3O7-delta (0.4 <= x <= 0.6) epitaxial thin films".SUPERCONDUCTOR SCIENCE & TECHNOLOGY 21.3(2008). |
入库方式： OAI收割
来源：物理研究所
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