Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers
文献类型：期刊论文
| 作者 | Yamada-Takamura, Y ; Wang, ZT ; Fujikawa, Y ; Sakurai, T ; Xue, QK ; Tolle, J ; Liu, PL ; Chizmeshya, AVG ; Kouvetakis, J ; Tsong, IST |
| 刊名 | PHYSICAL REVIEW LETTERS
 |
| 出版日期 | 2005 |
| 卷号 | 95期号:26 |
| 关键词 | TOTAL-ENERGY CALCULATIONS LIGHT-EMITTING-DIODES GROUP-III NITRIDES WAVE BASIS-SET GAN(000(1)OVER-BAR) SURFACE GROWTH ZRB2(0001) POLARITY SI |
| ISSN号 | 0031-9007 |
| 通讯作者 | Yamada-Takamura, Y (reprint author), Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan. |
| 中文摘要 | Gallium nitride films, epitaxially grown on Si(111) via a lattice-matched ZrB2 buffer layer by plasma-assisted molecular beam epitaxy, have been studied in situ by noncontact atomic force microscopy and also in real time by reflection high-energy electron diffraction. The grown films were determined to be always N-polar. First-principles theoretical calculations modeling the interface structure between GaN(0001) and ZrB2(0001) clarify the origin of the N polarity. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/54153]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yamada-Takamura, Y,Wang, ZT,Fujikawa, Y,et al. Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers[J]. PHYSICAL REVIEW LETTERS,2005,95(26). |
| APA | Yamada-Takamura, Y.,Wang, ZT.,Fujikawa, Y.,Sakurai, T.,Xue, QK.,...&Tsong, IST.(2005).Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers.PHYSICAL REVIEW LETTERS,95(26). |
| MLA | Yamada-Takamura, Y,et al."Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers".PHYSICAL REVIEW LETTERS 95.26(2005). |
入库方式： OAI收割
来源：物理研究所
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