Surface modification of MgAl2O4 (111) for growth of high-quality ZnO epitaxial films
文献类型：期刊论文
| 作者 | Zeng, ZQ ; Liu, YZ ; Yuan, HT ; Mei, ZX ; Du, XL ; Jia, JF ; Xue, QK ; Zhang, Z |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2007 |
| 卷号 | 90期号:8 |
| 关键词 | MOLECULAR-BEAM EPITAXY SAPPHIRE SUBSTRATE LAYER |
| ISSN号 | 0003-6951 |
| 通讯作者 | Zeng, ZQ (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China. |
| 中文摘要 | A magnesium wetting layer was used to modify the surface structure of MgAl2O4 (111) substrate to achieve growth of high-quality ZnO film by radio frequency plasma-assisted molecular beam epitaxy. It is found that this magnesium layer plays a crucial role in 30 degrees rotation domain elimination, defect density reduction, and polarity control of ZnO film, as demonstrated by in situ reflection high-energy electron diffraction and ex situ transmission electron microscopy. Atomic force microscopy observation shows smooth ZnO surfaces with clearly resolved atomic steps of the films. (c) 2007 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/54179]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zeng, ZQ,Liu, YZ,Yuan, HT,et al. Surface modification of MgAl2O4 (111) for growth of high-quality ZnO epitaxial films[J]. APPLIED PHYSICS LETTERS,2007,90(8). |
| APA | Zeng, ZQ.,Liu, YZ.,Yuan, HT.,Mei, ZX.,Du, XL.,...&Zhang, Z.(2007).Surface modification of MgAl2O4 (111) for growth of high-quality ZnO epitaxial films.APPLIED PHYSICS LETTERS,90(8). |
| MLA | Zeng, ZQ,et al."Surface modification of MgAl2O4 (111) for growth of high-quality ZnO epitaxial films".APPLIED PHYSICS LETTERS 90.8(2007). |
入库方式： OAI收割
来源：物理研究所
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