SURFACE ORDERING OF THE MOLECULAR-BEAM EPITAXIALLY GROWN GAAS(001)-2X4-AS RECONSTRUCTION
文献类型：期刊论文
| 作者 | ZHOU, JM ; XUE, QK ; CHAYA, H ; HASHIZUME, T ; SAKURAI, T |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 1994 |
| 卷号 | 64期号:5页码:583 |
| 关键词 | SCANNING TUNNELING MICROSCOPY SPECTROSCOPY |
| ISSN号 | 0003-6951 |
| 通讯作者 | ZHOU, JM (reprint author), TOHOKU UNIV,INST MAT RES,SENDAI 980,JAPAN. |
| 中文摘要 | Our scanning tunneling microscopy (STM) and reflection high-energy electron diffraction (RHEED) showed that the intensity of the two-fourths fractional order feature in the RHEED pattern for the GaAs(001)-2X4 structure reflects the degree of ordering of the vacancy rows. The STM images show a high degree of surface ordering only when the RHEED produces nearly-the equal intensity sharp streaks for all the fourfold fractional order diffraction. Two possible mechanisms, are suggested to explain the observed STM-RHEED correlation. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/54186]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | ZHOU, JM,XUE, QK,CHAYA, H,et al. SURFACE ORDERING OF THE MOLECULAR-BEAM EPITAXIALLY GROWN GAAS(001)-2X4-AS RECONSTRUCTION[J]. APPLIED PHYSICS LETTERS,1994,64(5):583. |
| APA | ZHOU, JM,XUE, QK,CHAYA, H,HASHIZUME, T,&SAKURAI, T.(1994).SURFACE ORDERING OF THE MOLECULAR-BEAM EPITAXIALLY GROWN GAAS(001)-2X4-AS RECONSTRUCTION.APPLIED PHYSICS LETTERS,64(5),583. |
| MLA | ZHOU, JM,et al."SURFACE ORDERING OF THE MOLECULAR-BEAM EPITAXIALLY GROWN GAAS(001)-2X4-AS RECONSTRUCTION".APPLIED PHYSICS LETTERS 64.5(1994):583. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。