Surface superstructures and optical properties of wurtzite GaN grown on 6H-SiC
文献类型：期刊论文
| 作者 | Xue, QK ; Xue, QZ ; Kuwano, S ; Nakayama, K ; Sakurai, T ; Tsong, IST ; Qiu, XG ; Segawa, Y |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2001 |
| 卷号 | 229期号:1页码:41 |
| 关键词 | MOLECULAR-BEAM EPITAXY SCANNING-TUNNELING-MICROSCOPY LATTICE POLARITY ATOMIC-STRUCTURE RECONSTRUCTION FILMS GAN(0001) DIFFRACTION MORPHOLOGY LAYERS |
| ISSN号 | 0022-0248 |
| 通讯作者 | Xue, QK (reprint author), Tohoku Univ, Mat Res Inst, Aoba Ku, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan. |
| 中文摘要 | We report on the surface reconstructions on the basal planes of wurtzite GaN. Depending on the surface polarity, two distinct classes of reconstructions form. The Ga-polar surface displays the Ga fluid-1 x 1, 10 x 10, 5 root3 x 2 root 13, 5 x 5, 4 x 4, and 2 x 2, and the (0 0 0 (1) over bar) N-polar surface the 6 x 8, 6 x 6, root7 x root7 and 2 x 3 with decreasing surface Ga coverage, We will show that their structure is consistent with a simple Ga-adatom-based scheme. Crystalline structure and optical properties of the GaN epilayers are examined by high resolution X-ray diffraction and photoluminescence, and the results reveal a strong relation between the threading-dislocation density and the intensities of both near-band transition at 3.427 eV and yellow luminescence at 2.16 eV. (C) 2001 Elsevier Science B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/54215]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xue, QK,Xue, QZ,Kuwano, S,et al. Surface superstructures and optical properties of wurtzite GaN grown on 6H-SiC[J]. JOURNAL OF CRYSTAL GROWTH,2001,229(1):41. |
| APA | Xue, QK.,Xue, QZ.,Kuwano, S.,Nakayama, K.,Sakurai, T.,...&Segawa, Y.(2001).Surface superstructures and optical properties of wurtzite GaN grown on 6H-SiC.JOURNAL OF CRYSTAL GROWTH,229(1),41. |
| MLA | Xue, QK,et al."Surface superstructures and optical properties of wurtzite GaN grown on 6H-SiC".JOURNAL OF CRYSTAL GROWTH 229.1(2001):41. |
入库方式： OAI收割
来源：物理研究所
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