Switching properties and dynamic domain structures in double barrier magnetic tunnel junctions
文献类型：期刊论文
| 作者 | Han, XF ; Zhao, SF ; Li, FF ; Daibou, T ; Kubota, H ; Ando, Y ; Miyazaki, T |
| 刊名 | JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
 |
| 出版日期 | 2004 |
| 卷号 | 282页码:225 |
| 关键词 | CO75FE25 FERROMAGNETIC ELECTRODES MAGNETORESISTANCE SINGLE MEMORY FILMS HEAD |
| ISSN号 | 0304-8853 |
| 通讯作者 | Han, XF (reprint author), Chinese Acad Sci, Inst Phys, State Key Lab Magnetism, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Double barrier magnetic tunnel junctions (DBMTJs) with the layer structures of Ta (5 nm)/Ni79Fe21 (40 nm)/Ir22Mn78 (10 nm)/Co75Fe25 (4 nm)/Al (1 nm)-oxide/Co75Fe25 (8 nm)/Al (1 nm)-oxide/Co75Fe25 (4 nm)/Ir22Mn78 (10 nm)/Ni79Fe21 (30 nm)/Ta (5 nm) on Si/SiO2 wafer were micro-fabricated using a TMR R&D magnetron sputtering system and lithography method. TMR ratios of 30.0% and 22.1%, resistance-area product RS of around 32.0 and 27.5 kOmegamum(2), and free layer coercivity of 201 and 141 Oe at 4.2 K and room temperature (RT), respectively, were obtained for the MTJs with a size of 80 x 80 mum(2) . Static and dynamic domain structures occur as the DC current increases and magnetization switching properties are simulated based on micromagnetics using the energy minimization method. TMR ratios in DBMTJs that are far lower than the expected theoretical values can be clarified based on micromagnetics simulations due to the vortex domain structures formed in the free layer. (C) 2004 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/54255]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Han, XF,Zhao, SF,Li, FF,et al. Switching properties and dynamic domain structures in double barrier magnetic tunnel junctions[J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS,2004,282:225. |
| APA | Han, XF.,Zhao, SF.,Li, FF.,Daibou, T.,Kubota, H.,...&Miyazaki, T.(2004).Switching properties and dynamic domain structures in double barrier magnetic tunnel junctions.JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS,282,225. |
| MLA | Han, XF,et al."Switching properties and dynamic domain structures in double barrier magnetic tunnel junctions".JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 282(2004):225. |
入库方式： OAI收割
来源：物理研究所
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