Synthesis and characterization of pure crystalline C-N film
文献类型:期刊论文
作者 | Wang, EG ; Chen, Y ; Guo, LP |
刊名 | PHYSICA SCRIPTA
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出版日期 | 1997 |
卷号 | T69页码:108 |
关键词 | NITRIDE THIN-FILMS CHEMICAL-VAPOR-DEPOSITION CARBON NITRIDE ION-BEAM DIAMOND SOLIDS SUPERHARD MODULI C3N4 |
ISSN号 | 0281-1847 |
通讯作者 | Wang, EG (reprint author), CHINESE ACAD SCI,INST PHYS,POB 603,BEIJING 100080,PEOPLES R CHINA. |
中文摘要 | We report successful experimental synthesis of pure crystalline C-N film on silicon and nickel substrates by bias-assisted hot filament chemical vapor deposition (bias-HFCVD). The obtained films have been firmly characterized by energy dispersive X-ray (EDX) and Auger electron microscopy for the chemical composition, X-ray diffraction (XRD) and selective-area electron diffraction (SAED) for the lattice structure, and scanning electron microscopy (SEM) and transmission electron microscopy (TEM) for the crystal morphology and symmetry. Our experimental lattice constants of alpha-C3N4 (a = 6.38 Angstrom, c = 4.648 Angstrom) and beta-C3N4 (a = 6.24 Angstrom, c = 2.36 Angstrom) with a relative N/C composition of 1.30-1.40 on nickel are in good agreement with the ab initio calculations by less than 1.3% and 2.5%, respectively. A new tetragonal C-N phase with a = 5.65 Angstrom and c = 2.75 Angstrom was identified for the first time in the laboratory. Furthermore, a specific C3N4 phase growth was studied by adding a fraction of hydrogen. A ''lattice match selection'' for the growth of C3N4 crystals on silicon is proposed. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-24 |
源URL | [http://ir.iphy.ac.cn/handle/311004/54320] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Wang, EG,Chen, Y,Guo, LP. Synthesis and characterization of pure crystalline C-N film[J]. PHYSICA SCRIPTA,1997,T69:108. |
APA | Wang, EG,Chen, Y,&Guo, LP.(1997).Synthesis and characterization of pure crystalline C-N film.PHYSICA SCRIPTA,T69,108. |
MLA | Wang, EG,et al."Synthesis and characterization of pure crystalline C-N film".PHYSICA SCRIPTA T69(1997):108. |
入库方式: OAI收割
来源:物理研究所
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