中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Synthesis and characterization of pure crystalline C-N film

文献类型:期刊论文

作者Wang, EG ; Chen, Y ; Guo, LP
刊名PHYSICA SCRIPTA
出版日期1997
卷号T69页码:108
关键词NITRIDE THIN-FILMS CHEMICAL-VAPOR-DEPOSITION CARBON NITRIDE ION-BEAM DIAMOND SOLIDS SUPERHARD MODULI C3N4
ISSN号0281-1847
通讯作者Wang, EG (reprint author), CHINESE ACAD SCI,INST PHYS,POB 603,BEIJING 100080,PEOPLES R CHINA.
中文摘要We report successful experimental synthesis of pure crystalline C-N film on silicon and nickel substrates by bias-assisted hot filament chemical vapor deposition (bias-HFCVD). The obtained films have been firmly characterized by energy dispersive X-ray (EDX) and Auger electron microscopy for the chemical composition, X-ray diffraction (XRD) and selective-area electron diffraction (SAED) for the lattice structure, and scanning electron microscopy (SEM) and transmission electron microscopy (TEM) for the crystal morphology and symmetry. Our experimental lattice constants of alpha-C3N4 (a = 6.38 Angstrom, c = 4.648 Angstrom) and beta-C3N4 (a = 6.24 Angstrom, c = 2.36 Angstrom) with a relative N/C composition of 1.30-1.40 on nickel are in good agreement with the ab initio calculations by less than 1.3% and 2.5%, respectively. A new tetragonal C-N phase with a = 5.65 Angstrom and c = 2.75 Angstrom was identified for the first time in the laboratory. Furthermore, a specific C3N4 phase growth was studied by adding a fraction of hydrogen. A ''lattice match selection'' for the growth of C3N4 crystals on silicon is proposed.
收录类别SCI
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/54320]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Wang, EG,Chen, Y,Guo, LP. Synthesis and characterization of pure crystalline C-N film[J]. PHYSICA SCRIPTA,1997,T69:108.
APA Wang, EG,Chen, Y,&Guo, LP.(1997).Synthesis and characterization of pure crystalline C-N film.PHYSICA SCRIPTA,T69,108.
MLA Wang, EG,et al."Synthesis and characterization of pure crystalline C-N film".PHYSICA SCRIPTA T69(1997):108.

入库方式: OAI收割

来源:物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。