Synthesis and electron storage characteristics of isolated silver nanodots on/embedded in Al2O3 gate dielectric
文献类型：期刊论文
| 作者 | Wang, Q ; Song, ZT ; Liu, WL ; Lin, CL ; Wang, TH |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2004 |
| 卷号 | 230期号:1-4页码:8 |
| 关键词 | INSULATOR-SEMICONDUCTOR STRUCTURE GERMANIUM NANOCRYSTALS SILICON NANOCRYSTALS MEMORIES SI GROWTH MATRIX CHARGE FILMS |
| ISSN号 | 0169-4332 |
| 通讯作者 | Wang, Q (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr Semicond Funct Film Engn Technol, Shanghai, Peoples R China. |
| 中文摘要 | Monolayer-isolated silver (Ag) nanodots with the average diameter down to 7 nm are synthesized on Al2O3/Si substrate by vacuum electron-beam evaporation followed by annealing at 400 degreesC in N-2 ambient. Metal-insulator-silicon (MIS) structures with Ag nanodots embedded in Al2O3 gate dielectric are fabricated. Clear electron storage effect with the flatband voltage shift of 1.3 eV is observed through capacitance-conductance and conductance-voltage measurements. Our results demonstrate the feasibility of applying Ag nanodots for nanocrystal floating-gate memory devices. (C) 2004 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/54343]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, Q,Song, ZT,Liu, WL,et al. Synthesis and electron storage characteristics of isolated silver nanodots on/embedded in Al2O3 gate dielectric[J]. APPLIED SURFACE SCIENCE,2004,230(1-4):8. |
| APA | Wang, Q,Song, ZT,Liu, WL,Lin, CL,&Wang, TH.(2004).Synthesis and electron storage characteristics of isolated silver nanodots on/embedded in Al2O3 gate dielectric.APPLIED SURFACE SCIENCE,230(1-4),8. |
| MLA | Wang, Q,et al."Synthesis and electron storage characteristics of isolated silver nanodots on/embedded in Al2O3 gate dielectric".APPLIED SURFACE SCIENCE 230.1-4(2004):8. |
入库方式： OAI收割
来源：物理研究所
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