Synthesis and field-electron-emission behavior of aligned GaAs nanowires
文献类型：期刊论文
| 作者 | Zhi, CY ; Bai, XD ; Wang, EG |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2005 |
| 卷号 | 86期号:21 |
| 关键词 | CARBON-FILMS DIAMOND FABRICATION NANOBELLS NANOTUBES TIP |
| ISSN号 | 0003-6951 |
| 通讯作者 | Wang, EG (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Large-area highly aligned GaAs nanowires were synthesized directly by etching GaAs wafer covered with Au film using H plasma. The characterizations by scanning electron microscopy and transmission electron microscopy reveal that the as-grown nanowires are uniform in distribution and the individual nanowires are well crystallized. The field-electron-emission behavior of the GaAs nanowire was studied and a low turn-on field of 2.0 V/μ m was achieved, which suggests its potential application as cold electron sources. The mechanism for field-emission enhancement is also discussed. © 2005 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/54348]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhi, CY,Bai, XD,Wang, EG. Synthesis and field-electron-emission behavior of aligned GaAs nanowires[J]. APPLIED PHYSICS LETTERS,2005,86(21). |
| APA | Zhi, CY,Bai, XD,&Wang, EG.(2005).Synthesis and field-electron-emission behavior of aligned GaAs nanowires.APPLIED PHYSICS LETTERS,86(21). |
| MLA | Zhi, CY,et al."Synthesis and field-electron-emission behavior of aligned GaAs nanowires".APPLIED PHYSICS LETTERS 86.21(2005). |
入库方式： OAI收割
来源：物理研究所
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