中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Synthesis of Isotopically-Labeled Graphite Films by Cold-Wall Chemical Vapor Deposition and Electronic Properties of Graphene Obtained from Such Films

文献类型:期刊论文

作者Cai, WW ; Piner, RD ; Zhu, YW ; Li, XS ; Tan, ZB ; Floresca, HC ; Yang, CL ; Lu, L ; Kim, MJ ; Ruoff, RS
刊名NANO RESEARCH
出版日期2009
卷号2期号:11页码:851
关键词DIAMOND GROWTH OXIDE
ISSN号1998-0124
通讯作者Ruoff, RS (reprint author), Univ Texas Austin, Dept Mech Engn, Austin, TX 78712 USA.
中文摘要We report the synthesis of isotopically-labeled graphite films on nickel substrates by using cold-wall chemical vapor deposition (CVD). During the synthesis, carbon from (12)C- and (13)C-methane was deposited on, and dissolved in, a nickel foil at high temperature, and a uniform graphite film was segregated from the nickel surface by cooling the sample to room temperature. Scanning and transmission electron microscopy, micro-Raman spectroscopy, and X-ray diffraction prove the presence of a graphite film. Monolayer graphene films obtained from such isotopically-labeled graphite films by mechanical methods have electron mobility values greater than 5000 cm(2) . V(-1) . s(-1) at low temperatures. Furthermore, such films exhibit the half-integer quantum Hall effect over a wide temperature range from 2 K to 200 K, implying that the graphite grown by this cold-wall CVD approach has a quality as high as highly oriented pyrolytic graphite (HOPG). The results from transport measurements indicate that (13)C-labeling does not significantly affect the electrical transport properties of graphene.
收录类别SCI
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/54441]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Cai, WW,Piner, RD,Zhu, YW,et al. Synthesis of Isotopically-Labeled Graphite Films by Cold-Wall Chemical Vapor Deposition and Electronic Properties of Graphene Obtained from Such Films[J]. NANO RESEARCH,2009,2(11):851.
APA Cai, WW.,Piner, RD.,Zhu, YW.,Li, XS.,Tan, ZB.,...&Ruoff, RS.(2009).Synthesis of Isotopically-Labeled Graphite Films by Cold-Wall Chemical Vapor Deposition and Electronic Properties of Graphene Obtained from Such Films.NANO RESEARCH,2(11),851.
MLA Cai, WW,et al."Synthesis of Isotopically-Labeled Graphite Films by Cold-Wall Chemical Vapor Deposition and Electronic Properties of Graphene Obtained from Such Films".NANO RESEARCH 2.11(2009):851.

入库方式: OAI收割

来源:物理研究所

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