Synthesis of semiconductor nanowires by annealing
文献类型：期刊论文
| 作者 | Zhi, CY ; Bai, XD ; Wang, EG |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2004 |
| 卷号 | 85期号:10页码:1802 |
| 关键词 | STRUCTURE LASER-DIODES WIRES GAAS |
| ISSN号 | 0003-6951 |
| 通讯作者 | Wang, EG (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Box 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Semiconductor nanowires, such as InAs, InP, beta-Ga2O3, and GaP are synthesized by annealing semiconductor wafers covered with Au film at an appropriate temperature in the region of 550degrees-650degreesC in a N-2 atmosphere. The composition of the resulting semiconductor nanowires is determined by both the substrate and the chemical conditions of growth. High-resolution transmission electron microscopy and selected area electron diffraction reveal high degrees of crystallization of the as-grown nanowires. The characteristics of the annealing method for synthesis of semiconductor nanowires are discussed. (C) 2004 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/54460]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhi, CY,Bai, XD,Wang, EG. Synthesis of semiconductor nanowires by annealing[J]. APPLIED PHYSICS LETTERS,2004,85(10):1802. |
| APA | Zhi, CY,Bai, XD,&Wang, EG.(2004).Synthesis of semiconductor nanowires by annealing.APPLIED PHYSICS LETTERS,85(10),1802. |
| MLA | Zhi, CY,et al."Synthesis of semiconductor nanowires by annealing".APPLIED PHYSICS LETTERS 85.10(2004):1802. |
入库方式： OAI收割
来源：物理研究所
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