A comparison of the field emission characteristics of vertically aligned graphene sheets grown on different SiC substrates
文献类型：期刊论文
| 作者 | Chen, LL ; Guo, LW ; Liu, Y ; Li, ZL ; Huang, J ; Lu, W |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2013 |
| 卷号 | 22期号:10 |
| 关键词 | field emission vertically aligned graphene sheets SiC substrate |
| ISSN号 | 1674-1056 |
| 通讯作者 | Guo, LW (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Res & Dev Ctr Funct Crystals, Beijing 100190, Peoples R China. |
| 中文摘要 | The field emission (FE) properties of vertically aligned graphene sheets (VAGSs) grown on different SiC substrates are reported. The VAGSs grown on nonpolar SiC (10-10) substrate show an ordered alignment with the graphene basal plane-parallel to each other, and show better FE features, with a lower turn-on field and a larger field enhancement factor. The VAGSs grown on polar SiC (000-1) substrate reveal a random petaloid-shaped arrangement and stable current emission over 8 hours with a maximum emission current fluctuation of only 4%. The reasons behind the differing FE characteristics of the VAGSs on different SiC substrates are analyzed and discussed. |
| 资助信息 | National Key Basic Research Program of China [2011CB932700]; National Natural Science Foundation of China [51272279, 51072223, 50972162] |
| 语种 | 英语 |
| 公开日期 | 2014-01-16 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/56711]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, LL,Guo, LW,Liu, Y,et al. A comparison of the field emission characteristics of vertically aligned graphene sheets grown on different SiC substrates[J]. CHINESE PHYSICS B,2013,22(10). |
| APA | Chen, LL,Guo, LW,Liu, Y,Li, ZL,Huang, J,&Lu, W.(2013).A comparison of the field emission characteristics of vertically aligned graphene sheets grown on different SiC substrates.CHINESE PHYSICS B,22(10). |
| MLA | Chen, LL,et al."A comparison of the field emission characteristics of vertically aligned graphene sheets grown on different SiC substrates".CHINESE PHYSICS B 22.10(2013). |
入库方式： OAI收割
来源：物理研究所
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