A High Performance In0.7Ga0.3As MOSFET with an InP Barrier Layer for Radio-Frequency Application
文献类型：期刊论文
| 作者 | Chang, HD ; Liu, GM ; Sun, B ; Zhao, W ; Wang, WX ; Liu, HG |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2013 |
| 卷号 | 30期号:3 |
| ISSN号 | 0256-307X |
| 通讯作者 | Liu, HG (reprint author), Chinese Acad Sci, Inst Microelect, Microwave Device & IC Dept, Beijing 100029, Peoples R China. |
| 中文摘要 | We demonstrate a high performance implant-free n-type In0.7Ga0.3As channel MOSFET with a 4-nm InP barrier layer fabricated on a semi-insulating substrate employing a 10-nm Al2O3 as gate dielectric. The maximum effective channel mobility is 1862 cm(2)/V.s extracted by the split C V method. Devices with 0.8 mu m gate length exhibit a peak extrinsic transconductance of 85mS/mm and a drive current of more than 200mA/mm. A short-circuit current gain cutoff frequency f(T) of 24.5 GHz and a maximum oscillation frequency f(max) of 54 GHz are achieved for the 0.8 mu m gate-length device. The research is helpful to obtain higher performance In0.7Ga0.3As MOSFETs for radio-frequency applications. |
| 资助信息 | National Basic Research Program of China [2011CBA00605, 2010CB327501]; National Science & Technology Major Project [2011ZX02708-003]; Chinese Academy of Sciences; Scientific Research Foundation for the Returned Overseas Chinese Scholars, the Ministry of Education of China |
| 语种 | 英语 |
| 公开日期 | 2014-01-16 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/56722]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chang, HD,Liu, GM,Sun, B,et al. A High Performance In0.7Ga0.3As MOSFET with an InP Barrier Layer for Radio-Frequency Application[J]. CHINESE PHYSICS LETTERS,2013,30(3). |
| APA | Chang, HD,Liu, GM,Sun, B,Zhao, W,Wang, WX,&Liu, HG.(2013).A High Performance In0.7Ga0.3As MOSFET with an InP Barrier Layer for Radio-Frequency Application.CHINESE PHYSICS LETTERS,30(3). |
| MLA | Chang, HD,et al."A High Performance In0.7Ga0.3As MOSFET with an InP Barrier Layer for Radio-Frequency Application".CHINESE PHYSICS LETTERS 30.3(2013). |
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来源：物理研究所
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