Aminosilanization Nanoadhesive Layer for Nanoelectric Circuits with Porous Ultralow Dielectric Film
文献类型：期刊论文
| 作者 | Zhao, ZK ; He, YY ; Yang, HF ; Qu, XP ; Lu, XC ; Luo, JB |
| 刊名 | ACS APPLIED MATERIALS & INTERFACES
 |
| 出版日期 | 2013 |
| 卷号 | 5期号:13页码:6097 |
| 关键词 | aminosilanization adhesive low dielectric oxygen plasma diffusion barrier interface adhesion |
| ISSN号 | 1944-8244 |
| 通讯作者 | Luo, JB (reprint author), Tsinghua Univ, State Key Lab Tribol, Beijing 100084, Peoples R China. |
| 中文摘要 | An ultrathin layer is investigated for its potential application of replacing conventional diffusion barriers and promoting interface adhesion for nanoelectric circuits with porous ultralow dielectrics. The porous ultralow dielectric (k approximate to 2.5) substrate is silanized by 3-amino-propyltrimethoxysilane (APTMS) to form the nanoadhesive layer by performing oxygen plasma modification and tailoring the silanization conditions appropriately. The high primary amine content is obtained in favor of strong interaction between amino groups and copper. And the results of leakage current measurements of metal-oxide-semiconductor capacitor structure demonstrate that the aminosilanization nanoadhesive layer can block copper diffusion effectively and guarantee the performance of devices. Furthermore, the results of four point bending tests indicate that the nanoadhesive layer with monolayer structure can provide the satisfactory interface toughness up to 63 +/- 0.5 J/m(2) for Cu/ultralow-k interface. Additionally, an annealing enhanced interface toughness effect occurs because of the formation of Cu-N bonding and siloxane bridges below 500 degrees C. However, the interface is weakened on account of the oxidization of amines and copper as well as the breaking of Cu-N bonding above 500 degrees C. It is also found that APTMS nanoadhesive layer with multilayer structure provides relatively low interface toughness compared with monolayer structure, which is mainly correlated to the breaking of interlayer hydrogen bonding. |
| 资助信息 | National Natural Science Foundation of China [51027007, 51021064]; State Key Development Program for Basic Research of China [2009CB724201] |
| 语种 | 英语 |
| 公开日期 | 2014-01-16 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/56766]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhao, ZK,He, YY,Yang, HF,et al. Aminosilanization Nanoadhesive Layer for Nanoelectric Circuits with Porous Ultralow Dielectric Film[J]. ACS APPLIED MATERIALS & INTERFACES,2013,5(13):6097. |
| APA | Zhao, ZK,He, YY,Yang, HF,Qu, XP,Lu, XC,&Luo, JB.(2013).Aminosilanization Nanoadhesive Layer for Nanoelectric Circuits with Porous Ultralow Dielectric Film.ACS APPLIED MATERIALS & INTERFACES,5(13),6097. |
| MLA | Zhao, ZK,et al."Aminosilanization Nanoadhesive Layer for Nanoelectric Circuits with Porous Ultralow Dielectric Film".ACS APPLIED MATERIALS & INTERFACES 5.13(2013):6097. |
入库方式： OAI收割
来源：物理研究所
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